Infineon Technologies IPP100N06S3-04
- Part Number:
- IPP100N06S3-04
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586873-IPP100N06S3-04
- Description:
- MOSFET N-CH 55V 100A TO-220
- Datasheet:
- IP(B,I,P)100N06S3-04
Infineon Technologies IPP100N06S3-04 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP100N06S3-04.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating100A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max214W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation214W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.4m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds14230pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs314nC @ 10V
- Rise Time62ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)62 ns
- Turn-Off Delay Time62 ns
- Continuous Drain Current (ID)100A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0044Ohm
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)400A
- Avalanche Energy Rating (Eas)450 mJ
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IPP100N06S3-04 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP100N06S3-04 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 400A.
IPP100N06S3-04 Applications
There are a lot of Infineon Technologies
IPP100N06S3-04 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP100N06S3-04 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 400A.
IPP100N06S3-04 Applications
There are a lot of Infineon Technologies
IPP100N06S3-04 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IPP100N06S3-04 More Descriptions
MOSFET N-CH 55V 100A TO-220
The three parts on the right have similar specifications to IPP100N06S3-04.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSurface MountPbfree CodeTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationTransistor ApplicationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAdditional FeatureSupplier Device PackageView Compare
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IPP100N06S3-04Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeOptiMOS™2007e3Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose Power55VMOSFET (Metal Oxide)260100ANOT SPECIFIED3Not Qualified1214W TcSingleENHANCEMENT MODE214WN-Channel4.4m Ω @ 80A, 10V4V @ 150μA14230pF @ 25V100A Tc314nC @ 10V62ns10V±20V62 ns62 ns100ATO-220AB20V0.0044Ohm55V400A450 mJRoHS CompliantLead Free-------------
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-Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2011e3Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose Power-MOSFET (Metal Oxide)260-NOT SPECIFIED3Not Qualified179W Tc-ENHANCEMENT MODE-N-Channel13.9m Ω @ 45A, 10V3.5V @ 33μA1730pF @ 40V45A Tc25nC @ 10V-6V 10V±20V---TO-220AB-0.0139Ohm-180A50 mJRoHS Compliant-NOyesSINGLEcompliantR-PSFM-T3SINGLE WITH BUILT-IN DIODESWITCHING80V45A80V--
-
-Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008e3Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose Power-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified158W Tc-ENHANCEMENT MODE-N-Channel9.9m Ω @ 50A, 10V2V @ 20μA1639pF @ 15V50A Tc13nC @ 5V-4.5V 10V±20V---TO-220AB-0.0099Ohm-200A57 mJRoHS Compliant-NO-SINGLEcompliantR-PSFM-T3SINGLE WITH BUILT-IN DIODESWITCHING30V50A30VLOGIC LEVEL COMPATIBLE-
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-Through HoleTO-220-3---55°C~175°C TJTubeOptiMOS™--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------300W Tc---N-Channel5mOhm @ 80A, 10V4V @ 250μA5.11pF @ 25V100A Tc170nC @ 10V-10V±20V---------Non-RoHS Compliant--------55V---PG-TO220-3-1
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