Infineon Technologies IPP05CN10L G
- Part Number:
- IPP05CN10L G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854185-IPP05CN10L G
- Description:
- MOSFET N-CH 100V 100A TO220-3
- ECAD Model:
-
- Datasheet:
- IPP05CN10L G
Infineon Technologies IPP05CN10L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP05CN10L G.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.1m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds15600pF @ 50V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs163nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)100A
- Drain-source On Resistance-Max0.0051Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)826 mJ
- RoHS StatusRoHS Compliant
IPP05CN10L G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 826 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 15600pF @ 50V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 100A.Peak drain current is 400A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPP05CN10L G Features
the avalanche energy rating (Eas) is 826 mJ
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
IPP05CN10L G Applications
There are a lot of Infineon Technologies
IPP05CN10L G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 826 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 15600pF @ 50V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 100A.Peak drain current is 400A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPP05CN10L G Features
the avalanche energy rating (Eas) is 826 mJ
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
IPP05CN10L G Applications
There are a lot of Infineon Technologies
IPP05CN10L G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPP05CN10L G More Descriptions
Compliant Through Hole 37 ns 288 ns 5.1 mΩ 1.85 V TO-220-3 3
Power Field-Effect Transistor, 100A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
MOSFET, N CH, 100A, 100V, PG-TO220-3; Transistor Polarity:N; Current Id Max:100A; Drain Source Voltage Vds:100V; On State Resistance:4.2mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:300W; Operating ;RoHS Compliant: Yes
Power Field-Effect Transistor, 100A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
MOSFET, N CH, 100A, 100V, PG-TO220-3; Transistor Polarity:N; Current Id Max:100A; Drain Source Voltage Vds:100V; On State Resistance:4.2mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:300W; Operating ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IPP05CN10L G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeView Compare
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IPP05CN10L GThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008e3Obsolete1 (Unlimited)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEN-ChannelSWITCHING5.1m Ω @ 100A, 10V2.4V @ 250μA15600pF @ 50V100A Tc163nC @ 10V100V4.5V 10V±20VTO-220AB100A0.0051Ohm400A100V826 mJRoHS Compliant------------- -
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008-Obsolete3 (168 Hours)3EAR99---MOSFET (Metal Oxide)SINGLE-compliant--R-PSFM-T3-1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEN-ChannelSWITCHING5.4m Ω @ 100A, 10V4V @ 250μA12100pF @ 40V100A Tc180nC @ 10V85V10V±20VTO-220AB100A0.0054Ohm400A85V826 mJ-------------
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Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2003e3Obsolete1 (Unlimited)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1-107W TcENHANCEMENT MODEN-ChannelSWITCHING4.2m Ω @ 55A, 10V2V @ 60μA3877pF @ 15V80A Tc32nC @ 5V-4.5V 10V±20VTO-220AB-0.0067Ohm385A-290 mJRoHS CompliantThrough Hole25V80ASingle107W4.5ns5.4 ns38 ns80A20V25VContains Lead
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Through HoleTO-220-3-SILICON-55°C~175°C TJTape & Box (TB)OptiMOS™2003e3Obsolete1 (Unlimited)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1-150W TcENHANCEMENT MODEN-ChannelSWITCHING3m Ω @ 55A, 10V2V @ 100μA7027pF @ 15V80A Tc57nC @ 5V-4.5V 10V±20VTO-220AB-0.0044Ohm385A-960 mJRoHS CompliantThrough Hole25V80ASingle150W8.5ns7.5 ns45 ns80A20V25V-
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