Infineon Technologies IPP023NE7N3 G

Name: IPP023NE7N3 G
Brand: Infineon Technologies
SKU: 2479013-IPP023NE7N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP023NE7N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479013-IPP023NE7N3 G

Description:: MOSFET N-CH 75V 120A TO220

ECAD Model:

Datasheet:: IPP023NE7N3 G

Specifications

Infineon Technologies IPP023NE7N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP023NE7N3 G.

Vgs(th) (Max) @ Id:
3.8V @ 273µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO220-3-1
Series:
OptiMOS™
Rds On (Max) @ Id, Vgs:
2.3 mOhm @ 100A, 10V
Power Dissipation (Max):
300W (Tc)
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
14400pF @ 37.5V
Gate Charge (Qg) (Max) @ Vgs:
206nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
75V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)

Description

The IPP023NE7N3 G is MOSFET N-CH 75V 120A TO220 , it is part of OptiMOS™ series. they are designed to work as Transistors - FETs, MOSFETs - Single.IPP023NE7N3 G with pin details manufactured by International Rectifier (Infineon Technologies). The IPP023NE7N3 G is available in PG-TO220-3-1 Package,it is part of the electronic component Chips.that includes OptiMOS™ Series. they are designed to operate as Transistors - FETs, MOSFETs - Single.it is with Operating Temperature -55°C ~ 175°C (TJ).IPP023NE7N3 G with original stock manufactured by International Rectifier (Infineon Technologies). The IPP023NE7N3 G is available in PG-TO220-3-1 Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of IPP023NE7N3 Gis designed to work in TO-220-3, it's Operating Temperature is -55°C ~ 175°C (TJ).The IPP023NE7N3 G is available in TO-220-3 Package, is part of the Transistors - FETs, MOSFETs - Single and belong to Discrete Semiconductor Products.IPP023NE7N3 G with EDA / CAD Models manufactured by International Rectifier (Infineon Technologies). The IPP023NE7N3 G is available in PG-TO220-3-1Package, is part of the Discrete Semiconductor Products.The IPP023NE7N3 G is Transistors - FETs, MOSFETs - Single with package TO-220-3 manufactured by International Rectifier (Infineon Technologies). The IPP023NE7N3 G is available in PG-TO220-3-1 Package, is part of the MOSFET N-CH 75V 120A TO220.

Product Comparison

The three parts on the right have similar specifications to IPP023NE7N3 G.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Pbfree Code

Mount

Number of Pins

Power Dissipation

Turn On Delay Time

Halogen Free

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

REACH SVHC

Lead Free

View Compare
IPP023NE7N3 G

Infineon Technologies

3.8V @ 273µA

±20V

MOSFET (Metal Oxide)

PG-TO220-3-1

OptiMOS™

2.3 mOhm @ 100A, 10V

300W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

14400pF @ 37.5V

206nC @ 10V

N-Channel

-

10V

75V

120A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP05N03LB G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

260

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

94W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

5.3m Ω @ 60A, 10V

2V @ 40μA

3209pF @ 15V

80A Tc

25nC @ 5V

30V

4.5V 10V

±20V

TO-220AB

80A

0.0053Ohm

320A

30V

136 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP023NE7N3 G vs IPP05N03LB G
IPP015N04NGXKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

250W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.5m Ω @ 100A, 10V

4V @ 200μA

20000pF @ 20V

120A Tc

250nC @ 10V

40V

10V

±20V

TO-220AB

120A

0.0015Ohm

400A

40V

865 mJ

ROHS3 Compliant

13 Weeks

yes

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP023NE7N3 G vs IPP015N04NGXKSA1
IPP093N06N3GXKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

AVALANCHE RATED

-

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

-

NOT SPECIFIED

3

-

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

71W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

9.3m Ω @ 50A, 10V

4V @ 34μA

2900pF @ 30V

50A Tc

36nC @ 10V

-

10V

±20V

TO-220AB

-

-

200A

-

-

ROHS3 Compliant

13 Weeks

yes

Through Hole

3

71W

15 ns

Halogen Free

40ns

5 ns

20 ns

50A

20V

60V

No SVHC

Lead Free

IPP023NE7N3 G vs IPP093N06N3GXKSA1

Certification

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IPP023NE7N3 G Specification

Part Number	Manufacturers	Description	Stock	Price
IPP023NE7N3GXKSA1 DISTI #V99:2348_06377158	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3 Tab) RoHS: Compliant	500	1 $5.6859 10 $4.404 25 $3.964 100 $3.77 500 $3.2599 2500 $2.755
IPP023NE7N3GXKSA1 DISTI #V36:1790_06377158	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3 Tab) RoHS: Compliant	269	1 $5.6859 10 $4.404 25 $3.964 100 $3.77 500 $3.2599 2500 $2.755
IPP023NE7N3GXKSA1 DISTI #IPP023NE7N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A TO220 RoHS: Compliant	1027	1 $5.49 10 $4.927 25 $4.658 100 $4.0369 500 $3.4365 2500 $2.75334
IPP023NE7N3G DISTI #IPP023NE7N3G-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A TO220 RoHS: Compliant	0
IPP023NE7N3GXKSA1 DISTI #31320936	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3 Tab) RoHS: Compliant	1100	5 $2.4198
IPP023NE7N3GXKSA1 DISTI #32596840	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3 Tab) RoHS: Compliant	500	3 $5.6859
IPP023NE7N3GXKSA1 DISTI #31577206	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3 Tab) RoHS: Compliant	269	3 $5.6859
IPP023NE7N3 G DISTI #30577429	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin(3 Tab) TO-220 RoHS: Compliant	194	9 $3.075
IPP023NE7N3 G DISTI #IPP023NE7N3 G	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin TO-220 Tube (Alt: RoHS: Compliant	2500	500 $3.286 1000 $3.18 1500 $3.08063 2500 $2.98727 5000 $2.94269 12500 $2.89941 25000 $2.85739
IPP023NE7N3 G DISTI #SP000641722	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin TO-220 Tube (Alt: RoHS: Compliant	0	1 $2.89 10 $2.59 25 $2.49 50 $2.39 100 $2.29 500 $2.19 1000 $2.09
IPP023NE7N3GXK DISTI #IPP023NE7N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 120A 3-Pin(3 Tab) TO-220 - R RoHS: Compliant	0	500 $2.79 1000 $2.69 2000 $2.59 3000 $2.49 5000 $2.49
IPP023NE7N3GXKSA1 DISTI #47W3476	Infineon Technologies AG	MOSFET, N CHANNEL, 75V, 120A, TO220, Transistor P	0	1 $5.26 10 $4.47 25 $4.28 50 $4.08 100 $3.88 250 $3.68 500 $3.3
IPP023NE7N3 G DISTI #726-IPP023NE7N3G	Infineon Technologies AG	MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 RoHS: Compliant	1401	1 $5.21 10 $4.43 100 $3.84 250 $3.64 500 $3.27
IPP023NE7N3GXKSA1 DISTI #726-IPP023NE7N3GXKSA	Infineon Technologies AG	MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 RoHS: Compliant	859	1 $5.21 10 $4.43 100 $3.84 250 $3.64 500 $3.27
IPP023NE7N3GXKSA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 75V, 0.0 RoHS: Compliant	600	1 $2.87 25 $2.66 100 $2.55 500 $2.45 1000 $2.33
IPP023NE7N3GXKSA1 DISTI #9064460P	Infineon Technologies AG	MOSFET N-CHANNEL 75V 120A OPTIMOS TO220, TU	330	20 $2.065
IPP023NE7N3GXKSA1 DISTI #2212851	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO220	17	1 $4.42 10 $3.38 100 $2.93 250 $2.78 500 $2.5
IPP023NE7N3G DISTI #	Infineon Technologies AG	75V,100A,N Channel Power MOSFET	14	1 $4.38 100 $3.65 500 $3.22 1000 $3.13
IPP023NE7N3GXKSA1 DISTI #2212851	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO220 RoHS: Compliant	0	1 $7.85 10 $6.68 100 $5.79 250 $5.49 500 $4.93

IPP023N~~(9)~~
IPP023~~(9)~~
IPP02~~(23)~~
IPP0~~(54)~~
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Infineon Technologies IPP023NE7N3 G

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