Infineon Technologies IPD70R600CEAUMA1
- Part Number:
- IPD70R600CEAUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487457-IPD70R600CEAUMA1
- Description:
- MOSFET N-CH TO252-3
- ECAD Model:
-
- Datasheet:
- IPD70R600CEAUMA1
Infineon Technologies IPD70R600CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD70R600CEAUMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackagePG-TO252-3
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max86W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id3.5V @ 0.21mA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds474pF @ 100V
- Current - Continuous Drain (Id) @ 25°C10.5A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Drain to Source Voltage (Vdss)700V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)10.5A
- Max Dual Supply Voltage700V
- Input Capacitance474pF
- FET FeatureSuper Junction
- Drain to Source Resistance540mOhm
- Rds On Max600 mΩ
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPD70R600CEAUMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 474pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.The maximum dual supply voltage can be supported by 700V.The transistor must receive a 700V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD70R600CEAUMA1 Features
a continuous drain current (ID) of 10.5A
single MOSFETs transistor is 540mOhm
a 700V drain to source voltage (Vdss)
IPD70R600CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD70R600CEAUMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 474pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.The maximum dual supply voltage can be supported by 700V.The transistor must receive a 700V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD70R600CEAUMA1 Features
a continuous drain current (ID) of 10.5A
single MOSFETs transistor is 540mOhm
a 700V drain to source voltage (Vdss)
IPD70R600CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD70R600CEAUMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPD70R600CEAUMA1 More Descriptions
Trans MOSFET N-CH 700V 10.5A 3-Pin(2 Tab) DPAK T/R
Mosfet, N-Ch, 700V, 10.5A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD70R600CEAUMA1
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
Mosfet, N-Ch, 700V, 10.5A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD70R600CEAUMA1
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
The three parts on the right have similar specifications to IPD70R600CEAUMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Max Dual Supply VoltageInput CapacitanceFET FeatureDrain to Source ResistanceRds On MaxRoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthSurface MountPbfree CodeTerminal PositionPin CountQualification StatusConfigurationTransistor ApplicationDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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IPD70R600CEAUMA118 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-40°C~150°C TJTape & Reel (TR)CoolMOS™2013Active1 (Unlimited)150°C-40°CMOSFET (Metal Oxide)86W TcN-Channel600mOhm @ 1A, 10V3.5V @ 0.21mAHalogen Free474pF @ 100V10.5A Tc22nC @ 10V700V10V±20V10.5A700V474pFSuper Junction540mOhm600 mΩROHS3 CompliantContains Lead------------------------------------ -
26 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™2010Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)75W TcP-Channel7.8m Ω @ 70A, 10V2.2V @ 120μAHalogen Free5430pF @ 25V70A Tc92nC @ 10V40V4.5V 10V±16V70A-40V----ROHS3 CompliantContains Lead3SILICONe32EAR99Tin (Sn)GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SingleENHANCEMENT MODEDRAIN12 ns10ns41 ns50 ns16V0.0078Ohm280A24 mJ2.41mm6.73mm6.22mm---------
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8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)OptiMOS™2013Obsolete3 (168 Hours)--MOSFET (Metal Oxide)31W TcN-Channel78m Ω @ 13A, 10V4V @ 12μA-716pF @ 50V13A Tc11nC @ 10V100V10V±20V------RoHS Compliant--SILICON-2EAR99-GULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21-ENHANCEMENT MODEDRAIN-----0.078Ohm52A17 mJ---YESnoSINGLE3Not QualifiedSINGLE WITH BUILT-IN DIODESWITCHING13A100V
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---PG-TO252-3--Tape & Reel (TR)------------------------RoHS Compliant------------------------------------
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