IPD70N10S3L-12

Infineon Technologies IPD70N10S3L-12

Part Number:
IPD70N10S3L-12
Manufacturer:
Infineon Technologies
Ventron No:
2487521-IPD70N10S3L-12
Description:
MOSFET N-CH 100V 70A TO252-3
ECAD Model:
Datasheet:
IPD70N10S3L-12

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Specifications
Infineon Technologies IPD70N10S3L-12 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD70N10S3L-12.
  • Package / Case
    PG-TO252-3
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
IPD70N10S3L-12 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD70N10S3L-12 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD70N10S3L-12. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPD70N10S3L-12.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Factory Lead Time
    Mounting Type
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Reach Compliance Code
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Mount
    Number of Pins
    Transistor Element Material
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    Halogen Free
    Rise Time
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    FET Feature
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IPD70N10S3L-12
    IPD70N10S3L-12
    PG-TO252-3
    Tape & Reel (TR)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD70R1K4P7SAUMA1
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    ROHS3 Compliant
    18 Weeks
    Surface Mount
    -40°C~150°C TJ
    CoolMOS™ P7
    2014
    e3
    yes
    Active
    3 (168 Hours)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    not_compliant
    23W Tc
    N-Channel
    1.4 Ω @ 700mA, 10V
    3.5V @ 40μA
    158pF @ 400V
    4A Tc
    4.7nC @ 10V
    700V
    10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD70N10S312ATMA1
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    ROHS3 Compliant
    14 Weeks
    Surface Mount
    -55°C~175°C TJ
    OptiMOS™
    2006
    e3
    -
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    not_compliant
    125W Tc
    N-Channel
    11.1m Ω @ 70A, 10V
    4V @ 83μA
    4355pF @ 25V
    70A Tc
    65nC @ 10V
    -
    10V
    ±20V
    Surface Mount
    3
    SILICON
    2
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    AEC-Q101
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    17 ns
    Halogen Free
    8ns
    25 ns
    70A
    20V
    100V
    0.0111Ohm
    280A
    410 mJ
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
  • IPD70R600CEAUMA1
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    ROHS3 Compliant
    18 Weeks
    Surface Mount
    -40°C~150°C TJ
    CoolMOS™
    2013
    -
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    86W Tc
    N-Channel
    600mOhm @ 1A, 10V
    3.5V @ 0.21mA
    474pF @ 100V
    10.5A Tc
    22nC @ 10V
    700V
    10V
    ±20V
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Halogen Free
    -
    -
    10.5A
    -
    700V
    -
    -
    -
    Contains Lead
    PG-TO252-3
    150°C
    -40°C
    474pF
    Super Junction
    540mOhm
    600 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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