Infineon Technologies IPD70N04S3-07

Name: IPD70N04S3-07
Brand: Infineon Technologies
SKU: 2854214-IPD70N04S3-07
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD70N04S3-07

Manufacturer:: Infineon Technologies

Ventron No:: 2854214-IPD70N04S3-07

Description:: MOSFET N-CH 40V 82A TO252-3

ECAD Model:

Datasheet:: IPD70N04S3-07

Specifications

Infineon Technologies IPD70N04S3-07 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD70N04S3-07.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2007
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA LOW RESISTANCE
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
79W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6m Ω @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 50μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
82A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
82A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
40V
Drain Current-Max (Abs) (ID)
70A
Drain-source On Resistance-Max
0.006Ohm
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
280A
Avalanche Energy Rating (Eas)
145 mJ
Height
2.3mm
Length
6.5mm
Width
6.22mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IPD70N04S3-07 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 145 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 82A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Drain current refers to the maximum continuous current a device can conduct, and it is 70A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17 ns.Peak drain current is 280A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD70N04S3-07 Features
the avalanche energy rating (Eas) is 145 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 280A.

IPD70N04S3-07 Applications
There are a lot of Infineon Technologies
IPD70N04S3-07 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

Product Comparison

The three parts on the right have similar specifications to IPD70N04S3-07.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

RoHS Status

Lead Free

Factory Lead Time

Terminal Position

Reach Compliance Code

Reference Standard

Operating Temperature (Min)

Configuration

Polarity/Channel Type

JEDEC-95 Code

DS Breakdown Voltage-Min

FET Technology

Mount

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

View Compare
IPD70N04S3-07

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2007

e3

no

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

ULTRA LOW RESISTANCE

8541.29.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

79W Tc

Single

ENHANCEMENT MODE

79W

DRAIN

13 ns

N-Channel

6m Ω @ 70A, 10V

4V @ 50μA

Halogen Free

2700pF @ 25V

82A Tc

40nC @ 10V

8ns

10V

±20V

7 ns

17 ns

82A

20V

40V

70A

0.006Ohm

40V

280A

145 mJ

2.3mm

6.5mm

6.22mm

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD70N12S3L12ATMA1

Infineon Technologies

-

-

YES

-

SILICON

-

Tape & Reel (TR)

-

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

-

-

-

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

-

1

-

-

ENHANCEMENT MODE

-

DRAIN

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

70A

0.0152Ohm

-

280A

410 mJ

-

-

-

ROHS3 Compliant

-

14 Weeks

SINGLE

not_compliant

AEC-Q101

-55°C

SINGLE WITH BUILT-IN DIODE

N-CHANNEL

TO-252

120V

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

-

IPD70N04S3-07 vs IPD70N12S3L12ATMA1
IPD70N10S3L-12

Infineon Technologies

-

PG-TO252-3

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD70N04S3-07 vs IPD70N10S3L-12
IPD70R600CEAUMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-40°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2013

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

86W Tc

-

-

-

-

-

N-Channel

600mOhm @ 1A, 10V

3.5V @ 0.21mA

Halogen Free

474pF @ 100V

10.5A Tc

22nC @ 10V

-

10V

±20V

-

-

10.5A

-

700V

-

-

-

-

-

-

-

-

ROHS3 Compliant

Contains Lead

18 Weeks

-

-

-

-

-

-

-

-

-

Surface Mount

PG-TO252-3

150°C

-40°C

700V

474pF

Super Junction

540mOhm

600 mΩ

IPD70N04S3-07 vs IPD70R600CEAUMA1

Certification

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IPD70N0~~(4)~~
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IPD~~(434)~~

Part Number	Manufacturers	Description	Stock	Price
IPD70N04S3-07 DISTI #C1S322000075377	Infineon Technologies AG	RoHS: Compliant	2	200 $0.353
IPD70N04S3-07 DISTI #IPD70N04S3-07TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 82A TO252-3 RoHS: Compliant	0
IPD70N04S3-07 DISTI #IPD70N04S3-07CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 82A TO252-3 RoHS: Compliant	0
IPD70N04S3-07 DISTI #IPD70N04S3-07DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 82A TO252-3 RoHS: Compliant	0
IPD70N04S3-07 DISTI #IPD70N04S3-07	Infineon Technologies AG	Trans MOSFET N-CH 40V 82A 3-Pin TO-252 T/R - Bulk RoHS: Compliant	0	834 $0.5469 836 $0.5269 1670 $0.5079 4170 $0.4909 8340 $0.4819
IPD70N04S307ATMA1 DISTI #IPD70N04S307ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 82A 3-Pin(2 Tab) TO-252 - Bu	0
IPD70N04S3-07 DISTI #726-IPD70N04S3-07	Infineon Technologies AG	MOSFET N-Ch 40V 70A DPAK-2 OptiMOS-T RoHS: Compliant	0
IPD70N04S307ATMA1 DISTI #N/A	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V	0
IPD70N04S3-07 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 82A I(D), 40V, 0.00 RoHS: Compliant	2500	1 $0.49 25 $0.45 100 $0.43 500 $0.42 1000 $0.4
IPD70N04S307ATMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 82A I(D), 40V, 0.00 RoHS: Compliant	7340	1 $0.49 25 $0.45 100 $0.43 500 $0.42 1000 $0.4

Infineon Technologies IPD70N04S3-07

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