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IPD50R800CEATMA1

Infineon Technologies IPD50R800CEATMA1

Part Number:
IPD50R800CEATMA1
Manufacturer:
Infineon Technologies
Ventron No:
3586174-IPD50R800CEATMA1
Description:
MOSFET N CH 500V 5A TO252
ECAD Model:
Datasheet:
IPD50R800CEATMA1

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Specifications
Infineon Technologies IPD50R800CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R800CEATMA1.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    PG-TO252-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    CoolMOS™ CE
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    60W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    800mOhm @ 1.5A, 13V
  • Vgs(th) (Max) @ Id
    3.5V @ 130μA
  • Input Capacitance (Ciss) (Max) @ Vds
    280pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12.4nC @ 10V
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    13V
  • Vgs (Max)
    ±20V
  • RoHS Status
    Non-RoHS Compliant
Description
IPD50R800CEATMA1 Overview
A device's maximal input capacitance is 280pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (13V).

IPD50R800CEATMA1 Features
a 500V drain to source voltage (Vdss)


IPD50R800CEATMA1 Applications
There are a lot of Rochester Electronics, LLC
IPD50R800CEATMA1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IPD50R800CEATMA1 More Descriptions
Trans MOSFET N-CH 500(Min)V 5A 3-Pin TO-252 T/R
Compliant Surface Mount 15.9 ns Tape & Reel (TR) 5.5 ns 800 mΩ TO-252-3 3
Metal Oxide Semiconductor Field Effect Transistor Opt
COOLMOS N-CHANNEL POWER MOSFET
Product Comparison
The three parts on the right have similar specifications to IPD50R800CEATMA1.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    ECCN Code
    HTS Code
    Factory Lead Time
    Mount
    Number of Pins
    Additional Feature
    Reference Standard
    Turn On Delay Time
    Halogen Free
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Lead Free
    View Compare
  • IPD50R800CEATMA1
    IPD50R800CEATMA1
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    PG-TO252-3
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™ CE
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    60W Tc
    N-Channel
    800mOhm @ 1.5A, 13V
    3.5V @ 130μA
    280pF @ 100V
    5A Tc
    12.4nC @ 10V
    500V
    13V
    ±20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50R399CP
    IPD50R399CP
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    83W Tc
    N-Channel
    399m Ω @ 4.9A, 10V
    3.5V @ 330μA
    890pF @ 100V
    9A Tc
    23nC @ 10V
    550V
    10V
    ±20V
    RoHS Compliant
    YES
    SILICON
    2007
    e3
    yes
    2
    TIN
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    9A
    0.399Ohm
    20A
    500V
    215 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IPD50R800CEATMA1 vs IPD50R399CP
  • IPD50R520CP
    IPD50R520CP
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    66W Tc
    N-Channel
    520m Ω @ 3.8A, 10V
    3.5V @ 250μA
    680pF @ 100V
    7.1A Tc
    17nC @ 10V
    550V
    10V
    ±20V
    RoHS Compliant
    YES
    SILICON
    2008
    -
    yes
    2
    -
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    7.1A
    0.52Ohm
    15A
    500V
    166 mJ
    EAR99
    8541.29.00.95
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IPD50R800CEATMA1 vs IPD50R520CP
  • IPD50N03S207ATMA1
    IPD50N03S207ATMA1
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    136W Tc
    N-Channel
    7.3m Ω @ 50A, 10V
    4V @ 85μA
    2000pF @ 25V
    50A Tc
    68nC @ 10V
    -
    10V
    ±20V
    ROHS3 Compliant
    -
    SILICON
    2006
    e3
    -
    2
    Tin (Sn)
    -
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    R-PSSO-G2
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    -
    -
    -
    -
    200A
    -
    250 mJ
    EAR99
    -
    10 Weeks
    Surface Mount
    3
    ULTRA LOW RESISTANCE
    AEC-Q101
    18 ns
    Halogen Free
    40ns
    30 ns
    26 ns
    50A
    20V
    30V
    Contains Lead
    IPD50R800CEATMA1 vs IPD50N03S207ATMA1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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