Infineon Technologies IPD50R1K4CEAUMA1
- Part Number:
- IPD50R1K4CEAUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2850959-IPD50R1K4CEAUMA1
- Description:
- MOSFET N-CH 500V 3.1A PG-TO-252
- Datasheet:
- IPD50R1K4CEAUMA1
Infineon Technologies IPD50R1K4CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R1K4CEAUMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™ CE
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Number of Elements1
- Power Dissipation-Max42W Tc
- Element ConfigurationSingle
- Power Dissipation25W
- Turn On Delay Time6.5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.4 Ω @ 900mA, 13V
- Vgs(th) (Max) @ Id3.5V @ 70μA
- Input Capacitance (Ciss) (Max) @ Vds178pF @ 100V
- Current - Continuous Drain (Id) @ 25°C3.1A Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time6ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)13V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)3.1A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage550V
- Height2.41mm
- Length6.73mm
- Width6.22mm
- RoHS StatusROHS3 Compliant
IPD50R1K4CEAUMA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 178pF @ 100V.This device has a continuous drain current (ID) of [3.1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=550V, the drain-source breakdown voltage is 550V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (13V).
IPD50R1K4CEAUMA1 Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 23 ns
a 500V drain to source voltage (Vdss)
IPD50R1K4CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R1K4CEAUMA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 178pF @ 100V.This device has a continuous drain current (ID) of [3.1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=550V, the drain-source breakdown voltage is 550V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (13V).
IPD50R1K4CEAUMA1 Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 23 ns
a 500V drain to source voltage (Vdss)
IPD50R1K4CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R1K4CEAUMA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPD50R1K4CEAUMA1 More Descriptions
Single N-Channel 500 V 1.4 Ohm 8.2 nC OptiMOS Power Mosfet - DPAK
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
The three parts on the right have similar specifications to IPD50R1K4CEAUMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyReach Compliance CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Reference StandardHalogen FreeMax Dual Supply VoltageLead FreeAdditional FeatureView Compare
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IPD50R1K4CEAUMA118 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~150°C TJTape & Reel (TR)CoolMOS™ CE2008e3yesActive3 (168 Hours)EAR99Tin (Sn)MOSFET (Metal Oxide)not_compliant142W TcSingle25W6.5 nsN-Channel1.4 Ω @ 900mA, 13V3.5V @ 70μA178pF @ 100V3.1A Tc8.2nC @ 10V6ns500V13V±20V30 ns23 ns3.1A30V550V2.41mm6.73mm6.22mmROHS3 Compliant---------------------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)CoolMOS™2007e3yesObsolete1 (Unlimited)-TINMOSFET (Metal Oxide)compliant183W Tc---N-Channel399m Ω @ 4.9A, 10V3.5V @ 330μA890pF @ 100V9A Tc23nC @ 10V-550V10V±20V--------RoHS CompliantYESSILICON2FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED4R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA9A0.399Ohm20A500V215 mJ-----
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14 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)not_compliant1100W Tc--10 nsN-Channel15m Ω @ 50A, 10V2.4V @ 60μA4180pF @ 25V50A Tc64nC @ 10V5ns-4.5V 10V±20V-29 ns50A20V----ROHS3 Compliant-SILICON2-SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED-R-PSSO-G2-SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN---0.0199Ohm200A--AEC-Q101Halogen Free100VContains Lead-
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10 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e3-Active1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)not_compliant1136W Tc--18 nsN-Channel7.3m Ω @ 50A, 10V4V @ 85μA2000pF @ 25V50A Tc68nC @ 10V40ns-10V±20V30 ns26 ns50A20V----ROHS3 Compliant-SILICON2-SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED-R-PSSO-G2-SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN----200A-250 mJAEC-Q101Halogen Free30VContains LeadULTRA LOW RESISTANCE
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