IPD50R1K4CEAUMA1

Infineon Technologies IPD50R1K4CEAUMA1

Part Number:
IPD50R1K4CEAUMA1
Manufacturer:
Infineon Technologies
Ventron No:
2850959-IPD50R1K4CEAUMA1
Description:
MOSFET N-CH 500V 3.1A PG-TO-252
ECAD Model:
Datasheet:
IPD50R1K4CEAUMA1

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Specifications
Infineon Technologies IPD50R1K4CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R1K4CEAUMA1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    CoolMOS™ CE
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Number of Elements
    1
  • Power Dissipation-Max
    42W Tc
  • Element Configuration
    Single
  • Power Dissipation
    25W
  • Turn On Delay Time
    6.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 900mA, 13V
  • Vgs(th) (Max) @ Id
    3.5V @ 70μA
  • Input Capacitance (Ciss) (Max) @ Vds
    178pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.2nC @ 10V
  • Rise Time
    6ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    13V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    3.1A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    550V
  • Height
    2.41mm
  • Length
    6.73mm
  • Width
    6.22mm
  • RoHS Status
    ROHS3 Compliant
Description
IPD50R1K4CEAUMA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 178pF @ 100V.This device has a continuous drain current (ID) of [3.1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=550V, the drain-source breakdown voltage is 550V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (13V).

IPD50R1K4CEAUMA1 Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 23 ns
a 500V drain to source voltage (Vdss)


IPD50R1K4CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R1K4CEAUMA1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPD50R1K4CEAUMA1 More Descriptions
Single N-Channel 500 V 1.4 Ohm 8.2 nC OptiMOS™ Power Mosfet - DPAK
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Product Comparison
The three parts on the right have similar specifications to IPD50R1K4CEAUMA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Reach Compliance Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    RoHS Status
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Reference Standard
    Halogen Free
    Max Dual Supply Voltage
    Lead Free
    Additional Feature
    View Compare
  • IPD50R1K4CEAUMA1
    IPD50R1K4CEAUMA1
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™ CE
    2008
    e3
    yes
    Active
    3 (168 Hours)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    not_compliant
    1
    42W Tc
    Single
    25W
    6.5 ns
    N-Channel
    1.4 Ω @ 900mA, 13V
    3.5V @ 70μA
    178pF @ 100V
    3.1A Tc
    8.2nC @ 10V
    6ns
    500V
    13V
    ±20V
    30 ns
    23 ns
    3.1A
    30V
    550V
    2.41mm
    6.73mm
    6.22mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50R399CP
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2007
    e3
    yes
    Obsolete
    1 (Unlimited)
    -
    TIN
    MOSFET (Metal Oxide)
    compliant
    1
    83W Tc
    -
    -
    -
    N-Channel
    399m Ω @ 4.9A, 10V
    3.5V @ 330μA
    890pF @ 100V
    9A Tc
    23nC @ 10V
    -
    550V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    YES
    SILICON
    2
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    9A
    0.399Ohm
    20A
    500V
    215 mJ
    -
    -
    -
    -
    -
  • IPD50N10S3L16ATMA1
    14 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    e3
    -
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    not_compliant
    1
    100W Tc
    -
    -
    10 ns
    N-Channel
    15m Ω @ 50A, 10V
    2.4V @ 60μA
    4180pF @ 25V
    50A Tc
    64nC @ 10V
    5ns
    -
    4.5V 10V
    ±20V
    -
    29 ns
    50A
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    2
    -
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    -
    R-PSSO-G2
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    -
    -
    -
    0.0199Ohm
    200A
    -
    -
    AEC-Q101
    Halogen Free
    100V
    Contains Lead
    -
  • IPD50N03S207ATMA1
    10 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2006
    e3
    -
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    not_compliant
    1
    136W Tc
    -
    -
    18 ns
    N-Channel
    7.3m Ω @ 50A, 10V
    4V @ 85μA
    2000pF @ 25V
    50A Tc
    68nC @ 10V
    40ns
    -
    10V
    ±20V
    30 ns
    26 ns
    50A
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    2
    -
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    -
    R-PSSO-G2
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    -
    -
    -
    -
    200A
    -
    250 mJ
    AEC-Q101
    Halogen Free
    30V
    Contains Lead
    ULTRA LOW RESISTANCE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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