Infineon Technologies IPD50R500CEBTMA1

Name: IPD50R500CEBTMA1
Brand: Infineon Technologies
SKU: 3554203-IPD50R500CEBTMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD50R500CEBTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 3554203-IPD50R500CEBTMA1

Description:: MOSFET N-CH 500V 7.6A PG-TO252

ECAD Model:

Datasheet:: IPD50R500CEBTMA1

Specifications

Infineon Technologies IPD50R500CEBTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R500CEBTMA1.

Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
CoolMOS™
Published
2013
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
57W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
500m Ω @ 2.3A, 13V
Vgs(th) (Max) @ Id
3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds
433pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7.6A Tc
Gate Charge (Qg) (Max) @ Vgs
18.7nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
13V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain-source On Resistance-Max
0.5Ohm
Pulsed Drain Current-Max (IDM)
24A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
129 mJ
FET Feature
Super Junction
RoHS Status
ROHS3 Compliant

Description

IPD50R500CEBTMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 129 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 433pF @ 100V.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (13V).

IPD50R500CEBTMA1 Features
the avalanche energy rating (Eas) is 129 mJ
based on its rated peak drain current 24A.
a 500V drain to source voltage (Vdss)

IPD50R500CEBTMA1 Applications
There are a lot of Infineon Technologies
IPD50R500CEBTMA1 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

Product Comparison

The three parts on the right have similar specifications to IPD50R500CEBTMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Feature

RoHS Status

Mount

Number of Pins

JESD-609 Code

ECCN Code

Terminal Finish

Reach Compliance Code

Reference Standard

Case Connection

Turn On Delay Time

Halogen Free

Rise Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Lead Free

Additional Feature

Fall Time (Typ)

Element Configuration

Power Dissipation

Drain to Source Breakdown Voltage

Height

Length

Width

View Compare
IPD50R500CEBTMA1

Infineon Technologies

6 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Cut Tape (CT)

CoolMOS™

2013

no

Discontinued

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

57W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

500m Ω @ 2.3A, 13V

3.5V @ 200μA

433pF @ 100V

7.6A Tc

18.7nC @ 10V

500V

13V

±20V

TO-252AA

0.5Ohm

24A

500V

129 mJ

Super Junction

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD50N10S3L16ATMA1

Infineon Technologies

14 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

-

Active

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

N-Channel

-

15m Ω @ 50A, 10V

2.4V @ 60μA

4180pF @ 25V

50A Tc

64nC @ 10V

-

4.5V 10V

±20V

-

0.0199Ohm

200A

-

-

-

ROHS3 Compliant

Surface Mount

3

e3

EAR99

Matte Tin (Sn)

not_compliant

AEC-Q101

DRAIN

10 ns

Halogen Free

5ns

29 ns

50A

20V

100V

Contains Lead

-

-

-

-

-

-

-

-

IPD50R500CEBTMA1 vs IPD50N10S3L16ATMA1
IPD50N03S207ATMA1

Infineon Technologies

10 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

-

Active

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

N-Channel

-

7.3m Ω @ 50A, 10V

4V @ 85μA

2000pF @ 25V

50A Tc

68nC @ 10V

-

10V

±20V

-

-

200A

-

250 mJ

-

ROHS3 Compliant

Surface Mount

3

e3

EAR99

Tin (Sn)

not_compliant

AEC-Q101

DRAIN

18 ns

Halogen Free

40ns

26 ns

50A

20V

30V

Contains Lead

ULTRA LOW RESISTANCE

30 ns

-

-

-

-

-

-

IPD50R500CEBTMA1 vs IPD50N03S207ATMA1
IPD50R1K4CEAUMA1

Infineon Technologies

18 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™ CE

2008

yes

Active

3 (168 Hours)

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

42W Tc

-

N-Channel

-

1.4 Ω @ 900mA, 13V

3.5V @ 70μA

178pF @ 100V

3.1A Tc

8.2nC @ 10V

500V

13V

±20V

-

-

-

-

-

-

ROHS3 Compliant

Surface Mount

3

e3

EAR99

Tin (Sn)

not_compliant

-

-

6.5 ns

-

6ns

23 ns

3.1A

30V

-

-

-

30 ns

Single

25W

550V

2.41mm

6.73mm

6.22mm

IPD50R500CEBTMA1 vs IPD50R1K4CEAUMA1

Certification

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IPD50R500CEBTMA1 Specification

Part Number	Manufacturers	Description	Stock	Price
IPD50R500CEAUMA1 DISTI #V72:2272_13979469	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	1613	1 $0.9244 10 $0.7742 25 $0.6334 100 $0.4562 250 $0.4106 500 $0.3696 1000 $0.3446
IPD50R500CEAUMA1 DISTI #V36:1790_13979469	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	0	2500 $0.3484 25000 $0.3404 250000 $0.2932 1250000 $0.2668 2500000 $0.2665
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 550V 7.6A TO252 RoHS: Compliant	9825	1 $0.93 10 $0.817 100 $0.626 500 $0.49488 1000 $0.39591
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 550V 7.6A TO252 RoHS: Compliant	9825	1 $0.93 10 $0.817 100 $0.626 500 $0.49488 1000 $0.39591
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 550V 7.6A TO252 RoHS: Compliant	7500	2500 $0.34835 5000 $0.32432 12500 $0.31231 25000 $0.3043
IPD50R500CEBTMA1 DISTI #IPD50R500CEBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant	1785	1 $1.13 10 $1.006 100 $0.7845 500 $0.64876 1000 $0.51305
IPD50R500CEBTMA1 DISTI #IPD50R500CEBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant	1785	1 $1.13 10 $1.006 100 $0.7845 500 $0.64876 1000 $0.51305
IPD50R500CEBTMA1 DISTI #IPD50R500CEBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant	0
IPD50R500CEATMA1 DISTI #IPD50R500CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant	0
IPD50R500CEATMA1 DISTI #IPD50R500CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant	0
IPD50R500CEATMA1 DISTI #IPD50R500CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant	0
IPD50R500CE DISTI #32730890	Infineon Technologies AG	0	2500	27 $0.9362
IPD50R500CEAUMA1 DISTI #32877180	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	2500	2500 $0.2865
IPD50R500CEAUMA1 DISTI #31742703	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	1613	20 $0.9244
IPD50R500CEAUMA1 DISTI #SP001396792	Infineon Technologies AG	CONSUMER (Alt: SP001396792) RoHS: Compliant	20000	2500 $0.4229 5000 $0.3459 10000 $0.3169 15000 $0.2929 25000 $0.2719
IPD50R500CE=FS1 DISTI #IPD50R500CE	Infineon Technologies AG	Trans MOSFET N-CH 550V 7.6A 3-Pin TO-252 T/R - Bul RoHS: Not Compliant	0	1191 $0.3309 2382 $0.3189 3573 $0.3069 5955 $0.2969 11910 $0.2919
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPD50R500CEAUMA1) RoHS: Compliant	0	2500 $0.3289 5000 $0.3169 10000 $0.3059 15000 $0.2949 25000 $0.2899
IPD50R500CEBTMA1 DISTI #IPD50R500CEBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 7.6A 3-Pin TO-252 T/R - Bul RoHS: Compliant	0	758 $0.4749 1516 $0.4579 2274 $0.4409 3790 $0.4259 7580 $0.4189
IPD50R500CEBTMA1 DISTI #SP000988424	Infineon Technologies AG	Trans MOSFET N-CH 550V 7.6A 3-Pin TO-252 T/R (Alt: RoHS: Compliant	0	2500 $0.5009 5000 $0.4249 10000 $0.3779 15000 $0.3399 25000 $0.3159
IPD50R500CEAUMA1 DISTI #22AC8283	Infineon Technologies AG	MOSFET, N-CH, 7.6A, 500V, TO-252, Transistor Pola	2025	1 $0.967 10 $0.807 25 $0.718 50 $0.628 100 $0.539 250 $0.507 500 $0.475 1000 $0.443
IPD50R500CEAUMA1 DISTI #726-IPD50R500CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	8400	1 $0.85 10 $0.71 100 $0.458 1000 $0.367
IPD50R500CE DISTI #726-SP001117704	Infineon Technologies AG	MOSFET N-Ch 500V 24A DPAK-2 RoHS: Compliant	0
IPD50R500CEBTMA1 DISTI #726-IPD50R500CE	Infineon Technologies AG	MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE RoHS: Compliant	0
IPD50R500CEATMA1 DISTI #726-IPD50R500CEATMA1	Infineon Technologies AG	MOSFET N-Ch 500V 24A DPAK-2	0
IPD50R500CE DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.5ohm, 1-Ele RoHS: Compliant	499828	1 $0.37 25 $0.35 100 $0.33 500 $0.32 1000 $0.3
IPD50R500CEBTMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.5ohm, 1-Ele RoHS: Compliant	17500	1 $0.53 25 $0.5 100 $0.48 500 $0.46 1000 $0.43
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 500V, 4.8A, Id	2486	1 $0.56 5 $0.51 25 $0.45 100 $0.41 500 $0.38
IPD50R500CE DISTI #TMOS1377	Infineon Technologies AG	N-CH 500V 7,6A 500mOhm TO252-3 RoHS: Compliant	85	1 $0.4307 4 $0.406 14 $0.3814 54 $0.3445 206 $0.3322
IPD50R500CE DISTI #	Infineon Technologies AG	500V,7.6A,500mOhm,N-channel MOSFET	100	1 $0.49 100 $0.41 500 $0.36 1000 $0.35
IPD50R500CEAUMA1 DISTI #2766355	Infineon Technologies AG	MOSFET, N-CH, 7.6A, 500V, TO-252	2020	1 $0.741 10 $0.594 100 $0.349 250 $0.326 500 $0.303
IPD50R500CEAUMA1 DISTI #2766355	Infineon Technologies AG	MOSFET, N-CH, 7.6A, 500V, TO-252 RoHS: Compliant	2020	1 $1.39 10 $1.23 100 $0.937 500 $0.741 1000 $0.593

IPD50R5~~(6)~~
IPD50R~~(34)~~
IPD50~~(60)~~
IPD5~~(60)~~
IPD~~(434)~~

Infineon Technologies IPD50R500CEBTMA1

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