Infineon Technologies IPD50R650CEAUMA1

IPD50R650CEAUMA1 Overview
This device's continuous drain current (ID) is 6.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 650mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).

IPD50R650CEAUMA1 Features
a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 650mOhm
a 500V drain to source voltage (Vdss)


IPD50R650CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R650CEAUMA1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples