Infineon Technologies IPD50R650CEATMA1
- Part Number:
- IPD50R650CEATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482592-IPD50R650CEATMA1
- Description:
- MOSFET N CH 500V 6.1A PG-TO252
- ECAD Model:
-
- Datasheet:
- IPD50R650CEATMA1
Infineon Technologies IPD50R650CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R650CEATMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™ CE
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max69W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs650m Ω @ 1.8A, 13V
- Vgs(th) (Max) @ Id3.5V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds342pF @ 100V
- Current - Continuous Drain (Id) @ 25°C6.1A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)13V
- Vgs (Max)±20V
IPD50R650CEATMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 342pF @ 100V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (13V).
IPD50R650CEATMA1 Features
a 500V drain to source voltage (Vdss)
IPD50R650CEATMA1 Applications
There are a lot of Infineon Technologies
IPD50R650CEATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 342pF @ 100V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (13V).
IPD50R650CEATMA1 Features
a 500V drain to source voltage (Vdss)
IPD50R650CEATMA1 Applications
There are a lot of Infineon Technologies
IPD50R650CEATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
The three parts on the right have similar specifications to IPD50R650CEATMA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimeMountNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreePbfree CodeElement ConfigurationPower DissipationDrain to Source Breakdown VoltageHeightLengthWidthView Compare
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IPD50R650CEATMA1Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)CoolMOS™ CE2012Obsolete3 (168 Hours)MOSFET (Metal Oxide)69W TcN-Channel650m Ω @ 1.8A, 13V3.5V @ 150μA342pF @ 100V6.1A Tc15nC @ 10V500V13V±20V---------------------------------------- -
-PG-TO252-3-Tape & Reel (TR)---------------RoHS Compliant--------------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Active1 (Unlimited)MOSFET (Metal Oxide)136W TcN-Channel7.3m Ω @ 50A, 10V4V @ 85μA2000pF @ 25V50A Tc68nC @ 10V-10V±20VROHS3 Compliant10 WeeksSurface Mount3SILICONe32EAR99Tin (Sn)ULTRA LOW RESISTANCESINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN18 nsHalogen Free40ns30 ns26 ns50A20V30V200A250 mJContains Lead-------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)CoolMOS™ CE2008Active3 (168 Hours)MOSFET (Metal Oxide)42W TcN-Channel1.4 Ω @ 900mA, 13V3.5V @ 70μA178pF @ 100V3.1A Tc8.2nC @ 10V500V13V±20VROHS3 Compliant18 WeeksSurface Mount3-e3-EAR99Tin (Sn)----not_compliant---1---6.5 ns-6ns30 ns23 ns3.1A30V----yesSingle25W550V2.41mm6.73mm6.22mm
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