Infineon Technologies IPD50R500CEAUMA1

Name: IPD50R500CEAUMA1
Brand: Infineon Technologies
SKU: 2482351-IPD50R500CEAUMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD50R500CEAUMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2482351-IPD50R500CEAUMA1

Description:: MOSFET N-CH 550V 7.6A TO252

ECAD Model:

Datasheet:: IPD50R500CEAUMA1

Specifications

Infineon Technologies IPD50R500CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R500CEAUMA1.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
CoolMOS™
Published
2005
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
57W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
500m Ω @ 2.3A, 13V
Vgs(th) (Max) @ Id
3.5V @ 200μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
433pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7.6A Tc
Gate Charge (Qg) (Max) @ Vgs
18.7nC @ 10V
Drain to Source Voltage (Vdss)
550V
Drive Voltage (Max Rds On,Min Rds On)
13V
Vgs (Max)
±20V
Max Dual Supply Voltage
500V
Drain-source On Resistance-Max
0.5Ohm
Pulsed Drain Current-Max (IDM)
24A
Avalanche Energy Rating (Eas)
129 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPD50R500CEAUMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 129 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 433pF @ 100V.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 500V.In order to operate this transistor, a voltage of 550V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (13V).

IPD50R500CEAUMA1 Features
the avalanche energy rating (Eas) is 129 mJ
based on its rated peak drain current 24A.
a 550V drain to source voltage (Vdss)

IPD50R500CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R500CEAUMA1 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IPD50R500CEAUMA1 More Descriptions

Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R
Mosfet, N-Ch, 7.6A, 500V, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.45Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD50R500CEAUMA1
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

Product Comparison

The three parts on the right have similar specifications to IPD50R500CEAUMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

JEDEC-95 Code

DS Breakdown Voltage-Min

FET Feature

HTS Code

Subcategory

Pin Count

Qualification Status

Drain Current-Max (Abs) (ID)

Number of Pins

JESD-609 Code

Terminal Finish

Reference Standard

Turn On Delay Time

Rise Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

View Compare
IPD50R500CEAUMA1

Infineon Technologies

18 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2005

yes

Active

3 (168 Hours)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

57W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

500m Ω @ 2.3A, 13V

3.5V @ 200μA

Halogen Free

433pF @ 100V

7.6A Tc

18.7nC @ 10V

550V

13V

±20V

500V

0.5Ohm

24A

129 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD50R500CEBTMA1

Infineon Technologies

6 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Cut Tape (CT)

CoolMOS™

2013

no

Discontinued

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

57W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

500m Ω @ 2.3A, 13V

3.5V @ 200μA

-

433pF @ 100V

7.6A Tc

18.7nC @ 10V

500V

13V

±20V

-

0.5Ohm

24A

129 mJ

ROHS3 Compliant

-

YES

TO-252AA

500V

Super Junction

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD50R500CEAUMA1 vs IPD50R500CEBTMA1
IPD50R520CP

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2008

yes

Obsolete

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

66W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

520m Ω @ 3.8A, 10V

3.5V @ 250μA

-

680pF @ 100V

7.1A Tc

17nC @ 10V

550V

10V

±20V

-

0.52Ohm

15A

166 mJ

RoHS Compliant

-

YES

TO-252AA

500V

-

8541.29.00.95

FET General Purpose Power

3

Not Qualified

7.1A

-

-

-

-

-

-

-

-

-

IPD50R500CEAUMA1 vs IPD50R520CP
IPD50N10S3L16ATMA1

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

-

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

15m Ω @ 50A, 10V

2.4V @ 60μA

Halogen Free

4180pF @ 25V

50A Tc

64nC @ 10V

-

4.5V 10V

±20V

100V

0.0199Ohm

200A

-

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

3

e3

Matte Tin (Sn)

AEC-Q101

10 ns

5ns

29 ns

50A

20V

IPD50R500CEAUMA1 vs IPD50N10S3L16ATMA1

Certification

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IPD50R500CEAUMA1 Specification

Part Number	Manufacturers	Description	Stock	Price
IPD50R500CEAUMA1 DISTI #V72:2272_13979469	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	1613	1 $0.9244 10 $0.7742 25 $0.6334 100 $0.4562 250 $0.4106 500 $0.3696 1000 $0.3446
IPD50R500CEAUMA1 DISTI #V36:1790_13979469	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	0	2500 $0.3484 25000 $0.3404 250000 $0.2932 1250000 $0.2668 2500000 $0.2665
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 550V 7.6A TO252 RoHS: Compliant	9825	1 $0.93 10 $0.817 100 $0.626 500 $0.49488 1000 $0.39591
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 550V 7.6A TO252 RoHS: Compliant	9825	1 $0.93 10 $0.817 100 $0.626 500 $0.49488 1000 $0.39591
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 550V 7.6A TO252 RoHS: Compliant	7500	2500 $0.34835 5000 $0.32432 12500 $0.31231 25000 $0.3043
IPD50R500CEAUMA1 DISTI #32877180	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	2500	2500 $0.2865
IPD50R500CEAUMA1 DISTI #31742703	Infineon Technologies AG	Trans MOSFET N-CH 500V 7.6A 3-Pin(2 Tab) DPAK T/R	1613	20 $0.9244
IPD50R500CEAUMA1 DISTI #SP001396792	Infineon Technologies AG	CONSUMER (Alt: SP001396792) RoHS: Compliant	20000	2500 $0.4229 5000 $0.3459 10000 $0.3169 15000 $0.2929 25000 $0.2719
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPD50R500CEAUMA1) RoHS: Compliant	0	2500 $0.3289 5000 $0.3169 10000 $0.3059 15000 $0.2949 25000 $0.2899
IPD50R500CEAUMA1 DISTI #22AC8283	Infineon Technologies AG	MOSFET, N-CH, 7.6A, 500V, TO-252, Transistor Pola	2025	1 $0.967 10 $0.807 25 $0.718 50 $0.628 100 $0.539 250 $0.507 500 $0.475 1000 $0.443
IPD50R500CEAUMA1 DISTI #726-IPD50R500CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	8400	1 $0.85 10 $0.71 100 $0.458 1000 $0.367
IPD50R500CEAUMA1 DISTI #IPD50R500CEAUMA1	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 500V, 4.8A, Id	2486	1 $0.56 5 $0.51 25 $0.45 100 $0.41 500 $0.38
IPD50R500CEAUMA1 DISTI #2766355	Infineon Technologies AG	MOSFET, N-CH, 7.6A, 500V, TO-252 RoHS: Compliant	2020	1 $1.39 10 $1.23 100 $0.937 500 $0.741 1000 $0.593
IPD50R500CEAUMA1 DISTI #2766355	Infineon Technologies AG	MOSFET, N-CH, 7.6A, 500V, TO-252	2020	1 $0.741 10 $0.594 100 $0.349 250 $0.326 500 $0.303

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Infineon Technologies IPD50R500CEAUMA1

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