IPB065N15N3 G

Infineon Technologies IPB065N15N3 G

Part Number:
IPB065N15N3 G
Manufacturer:
Infineon Technologies
Ventron No:
2480012-IPB065N15N3 G
Description:
MOSFET N-CH 150V 130A TO263-7
ECAD Model:
Datasheet:
IPB065N15N3 G

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Specifications
Infineon Technologies IPB065N15N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB065N15N3 G.
  • Surface Mount
    YES
  • Number of Terminals
    6
  • Transistor Element Material
    SILICON
  • JESD-609 Code
    e3
  • Pbfree Code
    icon-pbfree no
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G6
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    175°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-263
  • Drain Current-Max (Abs) (ID)
    130A
  • Drain-source On Resistance-Max
    0.0065Ohm
  • Pulsed Drain Current-Max (IDM)
    520A
  • DS Breakdown Voltage-Min
    150V
  • Avalanche Energy Rating (Eas)
    780 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • RoHS Status
    RoHS Compliant
Description
IPB065N15N3 G Description
IPB065N15N3 G is a 150v OptiMOS?3 Power-Transistor. The Infineon IPB065N15N3 G can be applied in Synchronous rectification for AC-DC SMPS, Motor control for 48V¨C8 0V systems, Isolated DC-DC converters, and other applications. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IPB065N15N3 G is in the TO-263-7 package with 300W power dissipation.

IPB065N15N3 G Features
Excellent switching performance
World?ˉs lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2

IPB065N15N3 G Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V¨C8 0V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems)
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
Product Comparison
The three parts on the right have similar specifications to IPB065N15N3 G.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    RoHS Status
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Number of Terminations
    Additional Feature
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Subcategory
    Mount
    Voltage - Rated DC
    Current Rating
    Continuous Drain Current (ID)
    Lead Free
    View Compare
  • IPB065N15N3 G
    IPB065N15N3 G
    YES
    6
    SILICON
    e3
    icon-pbfree no
    1 (Unlimited)
    EAR99
    Tin (Sn)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    3
    R-PSSO-G6
    Not Qualified
    175°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    N-CHANNEL
    TO-263
    130A
    0.0065Ohm
    520A
    150V
    780 mJ
    METAL-OXIDE SEMICONDUCTOR
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB049N06L3GATMA1
    YES
    -
    SILICON
    -
    yes
    1 (Unlimited)
    EAR99
    -
    SINGLE
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    80A
    0.0047Ohm
    320A
    60V
    77 mJ
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    Obsolete
    2
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    115W Tc
    N-Channel
    4.7m Ω @ 80A, 10V
    2.2V @ 58μA
    8400pF @ 30V
    80A Tc
    50nC @ 4.5V
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
  • IPB08CN10N G
    YES
    -
    SILICON
    e3
    -
    1 (Unlimited)
    EAR99
    MATTE TIN
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    95A
    0.0082Ohm
    380A
    100V
    262 mJ
    -
    RoHS Compliant
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2007
    Obsolete
    2
    -
    MOSFET (Metal Oxide)
    167W Tc
    N-Channel
    8.2m Ω @ 95A, 10V
    4V @ 130μA
    6660pF @ 50V
    95A Tc
    100nC @ 10V
    100V
    10V
    ±20V
    FET General Purpose Power
    -
    -
    -
    -
    -
  • IPB03N03LA
    -
    -
    SILICON
    e0
    -
    1 (Unlimited)
    EAR99
    Tin/Lead (Sn/Pb)
    SINGLE
    GULL WING
    220
    -
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    -
    0.0041Ohm
    385A
    -
    960 mJ
    -
    Non-RoHS Compliant
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2006
    Obsolete
    2
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    150W Tc
    N-Channel
    2.7m Ω @ 55A, 10V
    2V @ 100μA
    7027pF @ 15V
    80A Tc
    57nC @ 5V
    -
    4.5V 10V
    ±20V
    FET General Purpose Power
    Surface Mount
    25V
    80A
    80A
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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