Infineon Technologies IPB065N15N3 G
- Part Number:
- IPB065N15N3 G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480012-IPB065N15N3 G
- Description:
- MOSFET N-CH 150V 130A TO263-7
- Datasheet:
- IPB065N15N3 G
Infineon Technologies IPB065N15N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB065N15N3 G.
- Surface MountYES
- Number of Terminals6
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree no
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G6
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-263
- Drain Current-Max (Abs) (ID)130A
- Drain-source On Resistance-Max0.0065Ohm
- Pulsed Drain Current-Max (IDM)520A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)780 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- RoHS StatusRoHS Compliant
IPB065N15N3 G Description
IPB065N15N3 G is a 150v OptiMOS?3 Power-Transistor. The Infineon IPB065N15N3 G can be applied in Synchronous rectification for AC-DC SMPS, Motor control for 48V¨C8 0V systems, Isolated DC-DC converters, and other applications. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IPB065N15N3 G is in the TO-263-7 package with 300W power dissipation.
IPB065N15N3 G Features
Excellent switching performance
World?ˉs lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
IPB065N15N3 G Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V¨C8 0V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems)
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
IPB065N15N3 G is a 150v OptiMOS?3 Power-Transistor. The Infineon IPB065N15N3 G can be applied in Synchronous rectification for AC-DC SMPS, Motor control for 48V¨C8 0V systems, Isolated DC-DC converters, and other applications. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IPB065N15N3 G is in the TO-263-7 package with 300W power dissipation.
IPB065N15N3 G Features
Excellent switching performance
World?ˉs lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
IPB065N15N3 G Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V¨C8 0V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems)
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
The three parts on the right have similar specifications to IPB065N15N3 G.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyRoHS StatusMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusNumber of TerminationsAdditional FeatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)SubcategoryMountVoltage - Rated DCCurrent RatingContinuous Drain Current (ID)Lead FreeView Compare
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IPB065N15N3 GYES6SILICONe3icon-pbfree no1 (Unlimited)EAR99Tin (Sn)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G6Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGN-CHANNELTO-263130A0.0065Ohm520A150V780 mJMETAL-OXIDE SEMICONDUCTORRoHS Compliant---------------------------
-
YES-SILICON-yes1 (Unlimited)EAR99-SINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--80A0.0047Ohm320A60V77 mJ--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Obsolete2LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)115W TcN-Channel4.7m Ω @ 80A, 10V2.2V @ 58μA8400pF @ 30V80A Tc50nC @ 4.5V60V4.5V 10V±20V------
-
YES-SILICONe3-1 (Unlimited)EAR99MATTE TINSINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--95A0.0082Ohm380A100V262 mJ-RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2007Obsolete2-MOSFET (Metal Oxide)167W TcN-Channel8.2m Ω @ 95A, 10V4V @ 130μA6660pF @ 50V95A Tc100nC @ 10V100V10V±20VFET General Purpose Power-----
-
--SILICONe0-1 (Unlimited)EAR99Tin/Lead (Sn/Pb)SINGLEGULL WING220-NOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING---0.0041Ohm385A-960 mJ-Non-RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Obsolete2LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)150W TcN-Channel2.7m Ω @ 55A, 10V2V @ 100μA7027pF @ 15V80A Tc57nC @ 5V-4.5V 10V±20VFET General Purpose PowerSurface Mount25V80A80AContains Lead
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