Infineon Technologies IPB03N03LA
- Part Number:
- IPB03N03LA
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853885-IPB03N03LA
- Description:
- MOSFET N-CH 25V 80A D2PAK
- Datasheet:
- IPB03N03LA G
Infineon Technologies IPB03N03LA technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB03N03LA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC25V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)220
- Current Rating80A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.7m Ω @ 55A, 10V
- Vgs(th) (Max) @ Id2V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds7027pF @ 15V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs57nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)80A
- Drain-source On Resistance-Max0.0041Ohm
- Pulsed Drain Current-Max (IDM)385A
- Avalanche Energy Rating (Eas)960 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IPB03N03LA Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 960 mJ.A device's maximal input capacitance is 7027pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 385A, which is its maximum rated peak drain current.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IPB03N03LA Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 385A.
IPB03N03LA Applications
There are a lot of Infineon Technologies
IPB03N03LA applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 960 mJ.A device's maximal input capacitance is 7027pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 385A, which is its maximum rated peak drain current.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IPB03N03LA Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 385A.
IPB03N03LA Applications
There are a lot of Infineon Technologies
IPB03N03LA applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IPB03N03LA More Descriptions
MOSFET N-CH 25V 80A D2PAK
IC REG LINEAR 2.8V 100MA SOT23-5
IC REG LINEAR 2.8V 100MA SOT23-5
The three parts on the right have similar specifications to IPB03N03LA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeDrain to Source Voltage (Vdss)Surface MountPbfree CodeReach Compliance CodeDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinSupplier Device PackageView Compare
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IPB03N03LASurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLEFET General Purpose Power25VMOSFET (Metal Oxide)SINGLEGULL WING22080ANOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.7m Ω @ 55A, 10V2V @ 100μA7027pF @ 15V80A Tc57nC @ 5V4.5V 10V±20V80A0.0041Ohm385A960 mJNon-RoHS CompliantContains Lead--------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------107W Tc--N-Channel-3.5m Ω @ 55A, 10V2V @ 70μA5203pF @ 15V80A Tc40nC @ 5V4.5V 10V±20V------30V------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TIN-FET General Purpose Power-MOSFET (Metal Oxide)SINGLEGULL WING260-404R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE100W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING9.7m Ω @ 46A, 10V3.5V @ 46μA2410pF @ 40V70A Tc35nC @ 10V6V 10V±20V-0.0097Ohm280A90 mJRoHS Compliant-80VYESyescompliant70A80V-
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------42W Tc--N-Channel-9.6mOhm @ 30A, 10V2.2V @ 250μA1.6pF @ 15V35A Tc15nC @ 10V4.5V 10V±20V----ROHS3 Compliant-30V-----D2PAK (TO-263AB)
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