Infineon Technologies IPB03N03LB

Name: IPB03N03LB
Brand: Infineon Technologies
SKU: 3554713-IPB03N03LB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB03N03LB

Manufacturer:: Infineon Technologies

Ventron No:: 3554713-IPB03N03LB

Description:: MOSFET N-CH 30V 80A D2PAK

ECAD Model:

Datasheet:: IPB03N03LB

Specifications

Infineon Technologies IPB03N03LB technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB03N03LB.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
80A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
150W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.8m Ω @ 55A, 10V
Vgs(th) (Max) @ Id
2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
7624pF @ 15V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
59nC @ 5V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
80A
Drain-source On Resistance-Max
0.0039Ohm
Pulsed Drain Current-Max (IDM)
320A
Avalanche Energy Rating (Eas)
580 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

IPB03N03LB Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 580 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7624pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Peak drain current is 320A, which is the maximum pulsed drain current.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IPB03N03LB Features
the avalanche energy rating (Eas) is 580 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.

IPB03N03LB Applications
There are a lot of Infineon Technologies
IPB03N03LB applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IPB03N03LB More Descriptions

MOSFET N-CH 30V 80A D2PAK
Contact for details

Product Comparison

The three parts on the right have similar specifications to IPB03N03LB.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

Pbfree Code

Reach Compliance Code

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Supplier Device Package

View Compare
IPB03N03LB

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

80A

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.8m Ω @ 55A, 10V

2V @ 100μA

7624pF @ 15V

80A Tc

59nC @ 5V

4.5V 10V

±20V

80A

0.0039Ohm

320A

580 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-
IPB097N08N3 G

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

-

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.7m Ω @ 46A, 10V

3.5V @ 46μA

2410pF @ 40V

70A Tc

35nC @ 10V

6V 10V

±20V

-

0.0097Ohm

280A

90 mJ

RoHS Compliant

-

YES

yes

compliant

80V

70A

80V

-

IPB03N03LB vs IPB097N08N3 G
IPB096N03LGATMA1

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

42W Tc

-

-

N-Channel

-

9.6mOhm @ 30A, 10V

2.2V @ 250μA

1.6pF @ 15V

35A Tc

15nC @ 10V

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

-

-

-

-

30V

-

-

D2PAK (TO-263AB)

IPB03N03LB vs IPB096N03LGATMA1
IPB065N06L G

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

-

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

250W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.2m Ω @ 80A, 10V

2V @ 180μA

5100pF @ 30V

80A Tc

157nC @ 10V

4.5V 10V

±20V

-

0.0062Ohm

320A

530 mJ

RoHS Compliant

-

YES

-

compliant

60V

80A

60V

-

IPB03N03LB vs IPB065N06L G

Certification

Related parts for IPB03N03LB

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IPB03N0~~(6)~~
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IPB~~(73)~~

Part Number	Manufacturers	Description	Stock	Price
IPB03N03LB G DISTI #IPB03N03LBGINCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263 RoHS: Compliant	939	1 $1.59 10 $1.407
IPB03N03LB G DISTI #IPB03N03LBGINDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263 RoHS: Compliant	939	1 $1.59 10 $1.407
IPB03N03LB DISTI #IPB03N03LB-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A D2PAK RoHS: Not Compliant	0
IPB03N03LB G DISTI #IPB03N03LBGINTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263 RoHS: Compliant	0
IPB03N03LBG DISTI #	Infineon Technologies AG	Infineon OptlMOS™ N-Channel Power MOSFET IPB03N03 RoHS: Not Compliant	1000	1 $1.25 25 $1.16 100 $1.11 500 $1.07 1000 $1.01

Infineon Technologies IPB03N03LB

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