Infineon Technologies IPB019N06L3 G

Name: IPB019N06L3 G
Brand: Infineon Technologies
SKU: 2482912-IPB019N06L3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB019N06L3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2482912-IPB019N06L3 G

Description:: MOSFET N-CH 60V 120A TO263-3

ECAD Model:

Datasheet:: IPB019N06L3 G

Specifications

Infineon Technologies IPB019N06L3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB019N06L3 G.

Package / Case
PG-TO263-3
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

IPB019N06L3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB019N06L3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB019N06L3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPB019N06L3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Operating Temperature

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Surface Mount

Reach Compliance Code

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
IPB019N06L3 G

Infineon Technologies

PG-TO263-3

Tape & Reel (TR)

RoHS Compliant

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IPB04N03LB G

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

-

Surface Mount

-55°C~175°C TJ

OptiMOS™

2006

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

107W Tc

N-Channel

3.5m Ω @ 55A, 10V

2V @ 70μA

5203pF @ 15V

80A Tc

40nC @ 5V

30V

4.5V 10V

±20V

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IPB019N06L3 G vs IPB04N03LB G
IPB03N03LA

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

Non-RoHS Compliant

Surface Mount

-55°C~175°C TJ

OptiMOS™

2006

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

150W Tc

N-Channel

2.7m Ω @ 55A, 10V

2V @ 100μA

7027pF @ 15V

80A Tc

57nC @ 5V

-

4.5V 10V

±20V

Surface Mount

SILICON

e0

2

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

25V

SINGLE

GULL WING

220

80A

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

80A

0.0041Ohm

385A

960 mJ

Contains Lead

-

-

-

-

IPB019N06L3 G vs IPB03N03LA
IPB065N06L G

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

RoHS Compliant

Surface Mount

-55°C~175°C TJ

OptiMOS™

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

250W Tc

N-Channel

6.2m Ω @ 80A, 10V

2V @ 180μA

5100pF @ 30V

80A Tc

157nC @ 10V

60V

4.5V 10V

±20V

-

SILICON

e3

2

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

SINGLE

GULL WING

260

-

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

0.0062Ohm

320A

530 mJ

-

YES

compliant

80A

60V

IPB019N06L3 G vs IPB065N06L G