Infineon Technologies IPB016N06L3 G

Name: IPB016N06L3 G
Brand: Infineon Technologies
SKU: 2848998-IPB016N06L3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB016N06L3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2848998-IPB016N06L3 G

Description:: MOSFET N-CH 60V 180A TO263-7

ECAD Model:

Datasheet:: IPB016N06L3 G

Specifications

Infineon Technologies IPB016N06L3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB016N06L3 G.

Package / Case
PG-TO263-7
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
1.6mΩ @ 100A,10V
Vgs(th) (Max) @ Id
2.2V @ 196uA
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (Id) @ 25°C
180A Tc
Power Dissipation-Max (Ta=25°C)
250W Tc
RoHS Status
RoHS Compliant

Description

IPB016N06L3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB016N06L3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB016N06L3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPB016N06L3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Mount

Additional Feature

Voltage - Rated DC

Current Rating

Continuous Drain Current (ID)

Lead Free

View Compare
IPB016N06L3 G

Infineon Technologies

PG-TO263-7

Tape & Reel (TR)

N Channel

1.6mΩ @ 100A,10V

2.2V @ 196uA

60V

180A Tc

250W Tc

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB08CN10N G

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

8.2m Ω @ 95A, 10V

4V @ 130μA

100V

-

-

RoHS Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2007

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

167W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

6660pF @ 50V

95A Tc

100nC @ 10V

10V

±20V

95A

0.0082Ohm

380A

100V

262 mJ

-

-

-

-

-

-

IPB016N06L3 G vs IPB08CN10N G
IPB03N03LA

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

2.7m Ω @ 55A, 10V

2V @ 100μA

-

-

-

Non-RoHS Compliant

Surface Mount

-

SILICON

-55°C~175°C TJ

OptiMOS™

2006

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

220

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

7027pF @ 15V

80A Tc

57nC @ 5V

4.5V 10V

±20V

-

0.0041Ohm

385A

-

960 mJ

Surface Mount

LOGIC LEVEL COMPATIBLE

25V

80A

80A

Contains Lead

IPB016N06L3 G vs IPB03N03LA
IPB065N06L G

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

6.2m Ω @ 80A, 10V

2V @ 180μA

60V

-

-

RoHS Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

compliant

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

250W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

5100pF @ 30V

80A Tc

157nC @ 10V

4.5V 10V

±20V

80A

0.0062Ohm

320A

60V

530 mJ

-

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

-

-

-

-

IPB016N06L3 G vs IPB065N06L G

Certification

Related parts for IPB016N06L3 G

IPB009N03L G

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IPB016N06L3 G Specification

Part Number	Manufacturers	Description	Stock	Price
IPB016N06L3GATMA1 DISTI #V72:2272_06376928	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) D2PAK T/R RoHS: Compliant	326	1 $5.819 10 $4.5 25 $4.05 100 $3.909 250 $3.707
IPB016N06L3GATMA1 DISTI #V36:1790_06376928	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) D2PAK T/R RoHS: Compliant	0	1000 $2.962 10000 $2.905 100000 $2.557 500000 $2.35 1000000 $2.347
IPB016N06L3GATMA1 DISTI #IPB016N06L3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 180A TO263-7 RoHS: Compliant	1217	1 $4.81 10 $4.322 100 $3.5415 500 $3.01484
IPB016N06L3GATMA1 DISTI #IPB016N06L3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 180A TO263-7 RoHS: Compliant	1217	1 $4.81 10 $4.322 100 $3.5415 500 $3.01484
IPB016N06L3GATMA1 DISTI #IPB016N06L3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 180A TO263-7 RoHS: Compliant	0	1000 $2.46857 2000 $2.34514
IPB016N06L3 G DISTI #31310639	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) TO-263 T/R RoHS: Compliant	875	5 $5.1375
IPB016N06L3GATMA1 DISTI #30679642	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) D2PAK T/R RoHS: Compliant	326	3 $5.819
IPB016N06L3GXT DISTI #IPB016N06L3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) TO-263 T/R RoHS: Compliant	2000	1000 $2.39 2000 $2.29 4000 $2.19 6000 $2.09 10000 $2.09
IPB016N06L3G DISTI #SP000453040	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: RoHS: Compliant	0	1000 $2.19 2000 $2.09 4000 $2.09 6000 $1.99 10000 $1.89
IPB016N06L3GATMA1 DISTI #50Y2001	Infineon Technologies AG	MOSFET Transistor, N Channel, 180 A, 60 V, 0.0012	99	1 $4.48 10 $3.81 25 $3.64 50 $3.47 100 $3.3 250 $3.13 500 $2.81
IPB016N06L3 G DISTI #726-IPB016N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1 $4.44 10 $3.77 100 $3.27 250 $3.1 500 $2.78 1000 $2.35 2000 $2.23
IPB016N06L3GATMA1 DISTI #726-IPB016N06L3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1 $4.44 10 $3.77 100 $3.27 250 $3.1 500 $2.78 1000 $2.35 2000 $2.23
IPB016N06L3G DISTI #	Infineon Technologies AG	180A, 60V, 0.0016OHM, N-CHANNEL, SI, POWER, MOSFET	3
IPB016N06L3GATMA1 DISTI #2480796RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7 RoHS: Compliant	0	1 $6.69 10 $5.68 100 $4.93 250 $4.67 500 $4.19 1000 $3.54 2000 $3.36
IPB016N06L3GATMA1 DISTI #2480796	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7 RoHS: Compliant	2099	1 $6.69 10 $5.68 100 $4.93 250 $4.67 500 $4.19 1000 $3.54 2000 $3.36
IPB016N06L3GATMA1 DISTI #2480796	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7	2144	1 $3.82 10 $2.9 100 $2.52 250 $2.39 500 $2.14
IPB016N06L3 G DISTI #TMOSP9055	Infineon Technologies AG	N-CH 60V 180A 2mOhm TO263-7 RoHS: Compliant	0	1000 $3.09

IPB016N~~(2)~~
IPB016~~(2)~~
IPB01~~(30)~~
IPB0~~(75)~~
IPB~~(73)~~

Infineon Technologies IPB016N06L3 G

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