Infineon Technologies IKD06N60RATMA1
- Part Number:
- IKD06N60RATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854582-IKD06N60RATMA1
- Description:
- IGBT 600V 12A 100W TO252
- Datasheet:
- IKD06N60RATMA1
Infineon Technologies IKD06N60RATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKD06N60RATMA1.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchStop™
- Published2013
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation100W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max100W
- Transistor ApplicationPOWER CONTROL
- Halogen FreeHalogen Free
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current12A
- Reverse Recovery Time68 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time22 ns
- Test Condition400V, 6A, 23 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 6A
- Turn Off Time-Nom (toff)335 ns
- IGBT TypeTrench Field Stop
- Gate Charge48nC
- Current - Collector Pulsed (Icm)18A
- Td (on/off) @ 25°C12ns/127ns
- Switching Energy110μJ (on), 220μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.7V
- RoHS StatusROHS3 Compliant
IKD06N60RATMA1 Description
IKD06N60RATMA1, manufactured by Infineon and distributed by Worldway Electronics. Its category belongs to Electronic Components ICs. It is applied to many fields, like Communications equipment Wired networking Enterprise systems Enterprise machines Personal electronics Portable electronics. And the main parameters of this part is: Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style: TO-252; No. of Pins:3; SVHC: No SVHC (20-Jun-2011); Power Dissipation Max:100W. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
IKD06N60RATMA1 Features
Package: TO252-3
Device Package: PG-TO252-3
RoHS: Lead free / RoHS Compliant
Package/Case: TO-252-3, DPak (2 Leads Tab), SC-63
IKD06N60RATMA1 Applications
Enterprise systems
Personal electronics
Communications equipment
IKD06N60RATMA1, manufactured by Infineon and distributed by Worldway Electronics. Its category belongs to Electronic Components ICs. It is applied to many fields, like Communications equipment Wired networking Enterprise systems Enterprise machines Personal electronics Portable electronics. And the main parameters of this part is: Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style: TO-252; No. of Pins:3; SVHC: No SVHC (20-Jun-2011); Power Dissipation Max:100W. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
IKD06N60RATMA1 Features
Package: TO252-3
Device Package: PG-TO252-3
RoHS: Lead free / RoHS Compliant
Package/Case: TO-252-3, DPak (2 Leads Tab), SC-63
IKD06N60RATMA1 Applications
Enterprise systems
Personal electronics
Communications equipment
IKD06N60RATMA1 More Descriptions
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2 Tab) DPAK T/R
IGBT DIODE,600V,4A,TO252; Transistor Type:IGBT; DC Collector Current:6A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps; Fans; Home appliance; Industrial drives; Aircon
IGBT DIODE,600V,4A,TO252; Transistor Type:IGBT; DC Collector Current:6A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps; Fans; Home appliance; Industrial drives; Aircon
The three parts on the right have similar specifications to IKD06N60RATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationHalogen FreePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusTerminal PositionConfigurationLead FreeBase Part NumberCurrent - Collector (Ic) (Max)Switching FrequencyHeightLengthWidthView Compare
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IKD06N60RATMA116 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-40°C~175°C TJTape & Reel (TR)TrenchStop™2013e3noActive1 (Unlimited)2EAR99Tin (Sn)Insulated Gate BIP Transistors100WGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified1SingleCOLLECTORStandard100WPOWER CONTROLHalogen FreeN-CHANNEL2.1V12A68 ns600V600V22 ns400V, 6A, 23 Ω, 15V2.1V @ 15V, 6A335 nsTrench Field Stop48nC18A12ns/127ns110μJ (on), 220μJ (off)20V5.7VROHS3 Compliant----------
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-40°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchStop™2002-yesNot For New Designs1 (Unlimited)2---75WGULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2-1-COLLECTORStandard75WPOWER CONTROLHalogen FreeN-CHANNEL600V8A34 ns600V-18 ns400V, 4A, 43 Ω, 15V2.5V @ 15V, 4A216 nsTrench27nC12A12ns/116ns60μJ (on), 50μJ (off)--ROHS3 CompliantSINGLESINGLE WITH BUILT-IN DIODEContains Lead------
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16 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---40°C~175°C TJTape & Reel (TR)TrenchStop®2008e3noActive1 (Unlimited)-EAR99Tin (Sn)Insulated Gate BIP Transistors100W-NOT SPECIFIEDnot_compliantNOT SPECIFIED----Single-Standard100W-Halogen FreeN-CHANNEL600V12A48 ns600V600V-400V, 6A, 23 Ω, 15V2.5V @ 15V, 6A-Trench Field Stop48nC18A7ns/106ns90μJ (on), 90μJ (off)20V5.7VROHS3 Compliant--Contains Lead*KD06N60-----
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16 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-40°C~175°C TJTape & Reel (TR)TrenchStop™2012e3noActive1 (Unlimited)2EAR99Tin (Sn)-30WGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2-1SingleCOLLECTORStandard75WPOWER CONTROLHalogen FreeN-CHANNEL2.4V6A34 ns600V600V18 ns400V, 4A, 43 Ω, 15V2.5V @ 15V, 4A216 nsTrench27nC12A12ns/116ns60μJ (on), 50μJ (off)--ROHS3 Compliant----8A-30kHz2.41mm6.73mm6.22mm
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