Infineon Technologies IKD03N60RFATMA1

Name: IKD03N60RFATMA1
Brand: Infineon Technologies
SKU: 3587162-IKD03N60RFATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IKD03N60RFATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 3587162-IKD03N60RFATMA1

Description:: IGBT 600V 6.5A 53.6W TO252

ECAD Model:

Datasheet:: IKD03N60RFATMA1

Specifications

Infineon Technologies IKD03N60RFATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKD03N60RFATMA1.

Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchStop™
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
53.6W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
5A
Reverse Recovery Time
31 ns
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
6.5A
Max Breakdown Voltage
600V
Turn On Time
18 ns
Test Condition
400V, 2.5A, 68 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 2.5A
Switching Frequency
-30kHz
Turn Off Time-Nom (toff)
265 ns
IGBT Type
Trench Field Stop
Gate Charge
17.1nC
Current - Collector Pulsed (Icm)
7.5A
Td (on/off) @ 25°C
10ns/128ns
Switching Energy
50μJ (on), 40μJ (off)
Height
2.41mm
Length
6.73mm
Width
6.22mm
RoHS Status
ROHS3 Compliant

Description

IKD03N60RFATMA1 Description
IGBT in packages with integrated diode offers benefit of space saving

IKD03N60RFATMA1 Features
Application range: 4 to 30 kHz
Low EMI levels are produced through smooth switchinc performance.
Extremely narrow parameter range
175°C is the maximum junction temperature
5 ps of short-circuit capacity

IKD03N60RFATMA1 Applications
Compressors
Pumps
Fans

IKD03N60RFATMA1 More Descriptions

Transistor, Igbt, 600V, 6.5A, To-252 Rohs Compliant: Yes |Infineon IKD03N60RFATMA1
The RC-Drives 600 V, 3 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market, PG-TO252-3, RoHSInfineon SCT
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW

Product Comparison

The three parts on the right have similar specifications to IKD03N60RFATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Input Type

Transistor Application

Halogen Free

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Current - Collector (Ic) (Max)

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Switching Frequency

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Height

Length

Width

RoHS Status

Surface Mount

Subcategory

Terminal Position

Base Part Number

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Power Dissipation-Max (Abs)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Lead Free

View Compare
IKD03N60RFATMA1

Infineon Technologies

17 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-40°C~175°C TJ

Tape & Reel (TR)

TrenchStop™

2012

e3

no

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

53.6W

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

3

R-PSSO-G2

1

Single

COLLECTOR

Standard

POWER CONTROL

Halogen Free

N-CHANNEL

2.5V

5A

31 ns

600V

6.5A

600V

18 ns

400V, 2.5A, 68 Ω, 15V

2.5V @ 15V, 2.5A

-30kHz

265 ns

Trench Field Stop

17.1nC

7.5A

10ns/128ns

50μJ (on), 40μJ (off)

2.41mm

6.73mm

6.22mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
IKD04N60RF

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-40°C~175°C TJ

Tape & Reel (TR)

TrenchStop®

2012

e3

yes

Obsolete

1 (Unlimited)

2

-

Tin (Sn)

-

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSSO-G2

1

-

COLLECTOR

Standard

POWER CONTROL

-

N-CHANNEL

-

-

34ns

-

8A

-

18 ns

400V, 4A, 43 Ω, 15V

2.5V @ 15V, 4A

-

216 ns

Trench

27nC

12A

12ns/116ns

110μJ

-

-

-

RoHS Compliant

YES

Insulated Gate BIP Transistors

SINGLE

*KD04N60

SINGLE WITH BUILT-IN DIODE

75W

600V

75W

20V

5.7V

-

IKD03N60RFATMA1 vs IKD04N60RF
IKD04N60RFAATMA1

Infineon Technologies

17 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-40°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchStop™

2002

-

yes

Not For New Designs

1 (Unlimited)

2

-

-

75W

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

-

R-PSSO-G2

1

-

COLLECTOR

Standard

POWER CONTROL

Halogen Free

N-CHANNEL

600V

8A

34 ns

600V

-

-

18 ns

400V, 4A, 43 Ω, 15V

2.5V @ 15V, 4A

-

216 ns

Trench

27nC

12A

12ns/116ns

60μJ (on), 50μJ (off)

-

-

-

ROHS3 Compliant

-

-

SINGLE

-

SINGLE WITH BUILT-IN DIODE

75W

-

-

-

-

Contains Lead

IKD03N60RFATMA1 vs IKD04N60RFAATMA1
IKD06N60RFATMA1

Infineon Technologies

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-40°C~175°C TJ

Tape & Reel (TR)

TrenchStop®

2008

e3

no

Active

1 (Unlimited)

-

EAR99

Tin (Sn)

100W

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

-

-

Single

-

Standard

-

Halogen Free

N-CHANNEL

600V

12A

48 ns

600V

-

600V

-

400V, 6A, 23 Ω, 15V

2.5V @ 15V, 6A

-

-

Trench Field Stop

48nC

18A

7ns/106ns

90μJ (on), 90μJ (off)

-

-

-

ROHS3 Compliant

-

Insulated Gate BIP Transistors

-

*KD06N60

-

100W

-

-

20V

5.7V

Contains Lead

IKD03N60RFATMA1 vs IKD06N60RFATMA1

Certification

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IGBT PRODUCTS

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Part Number	Manufacturers	Description	Stock	Price
IKD03N60RFATMA1 DISTI #V36:1790_06384425	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.4897 25000 $0.4796 250000 $0.4204 1250000 $0.3883 2500000 $0.388
IKD03N60RFATMA1 DISTI #IKD03N60RFATMA1CT-ND	Infineon Technologies AG	IGBT 600V 6.5A TO252-3 RoHS: Compliant	2296	1 $1.19 10 $1.063 100 $0.8286 500 $0.68446 1000 $0.54037
IKD03N60RFATMA1 DISTI #IKD03N60RFATMA1DKR-ND	Infineon Technologies AG	IGBT 600V 6.5A TO252-3 RoHS: Compliant	2296	1 $1.19 10 $1.063 100 $0.8286 500 $0.68446 1000 $0.54037
IKD03N60RFATMA1 DISTI #IKD03N60RFATMA1TR-ND	Infineon Technologies AG	IGBT 600V 6.5A TO252-3 RoHS: Compliant	0	2500 $0.48966 5000 $0.46634
IKD03N60RFATMA1 DISTI #IKD03N60RFATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Bu RoHS: Compliant	0	863 $0.4169 1726 $0.4019 2589 $0.3879 4315 $0.3749 8630 $0.3679
IKD03N60RFATMA1 DISTI #IKD03N60RFATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Ta RoHS: Compliant	0	2500 $0.4789 5000 $0.4619 10000 $0.4449 15000 $0.4299 25000 $0.4229
IKD03N60RFATMA1 DISTI #SP000942930	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R (Alt RoHS: Compliant	0	2500 $0.5799 5000 $0.4749 10000 $0.4349 15000 $0.4019 25000 $0.3729
IKD03N60RFATMA1 DISTI #726-IKD03N60RFATMA1	Infineon Technologies AG	IGBT Transistors IGBT w/ INTG DIODE 600V 5A RoHS: Compliant	2061	1 $1.05 10 $0.891 100 $0.684 500 $0.605 1000 $0.477 2500 $0.423
IKD03N60RFATMA1 DISTI #	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 5A I(C), 600V V RoHS: Compliant	9000	1 $0.47 25 $0.44 100 $0.42 500 $0.4 1000 $0.38
IKD03N60RFATMA1 DISTI #IKD03N60RF	Infineon Technologies AG	600V 5A 53,6W TO252 RoHS: Compliant	0	5 $1.28 50 $0.68 200 $0.38 500 $0.36

Infineon Technologies IKD03N60RFATMA1

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