TT Electronics/Optek Technology HCT7000M
- Part Number:
- HCT7000M
- Manufacturer:
- TT Electronics/Optek Technology
- Ventron No:
- 2850847-HCT7000M
- Description:
- MOSFET N-CH 60V 200MA SMD
- Datasheet:
- HCT7000M
TT Electronics/Optek Technology HCT7000M technical specifications, attributes, parameters and parts with similar specifications to TT Electronics/Optek Technology HCT7000M.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Supplier Device Package3-SMD
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Power Dissipation300mW
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±40V
- Turn-Off Delay Time10 ns
- Continuous Drain Current (ID)200mA
- Gate to Source Voltage (Vgs)40V
- Input Capacitance60pF
- Drain to Source Resistance5Ohm
- Rds On Max5 Ω
- Height1.3716mm
- Length3.175mm
- Width2.667mm
- RoHS StatusNon-RoHS Compliant
HCT7000M Overview
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
HCT7000M Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 10 ns
single MOSFETs transistor is 5Ohm
a 60V drain to source voltage (Vdss)
HCT7000M Applications
There are a lot of TT Electronics/Optek Technology
HCT7000M applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
HCT7000M Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 10 ns
single MOSFETs transistor is 5Ohm
a 60V drain to source voltage (Vdss)
HCT7000M Applications
There are a lot of TT Electronics/Optek Technology
HCT7000M applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
HCT7000M More Descriptions
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-Oxide
Hct7000M |Tt Electronics/optek Technology HCT7000M
N- Channel Enhancement Mode Transisitor
N-CHANNEL ENHANCE.MODE TRANSIS
Hct7000M |Tt Electronics/optek Technology HCT7000M
N- Channel Enhancement Mode Transisitor
N-CHANNEL ENHANCE.MODE TRANSIS
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