HCT7000M

TT Electronics/Optek Technology HCT7000M

Part Number:
HCT7000M
Manufacturer:
TT Electronics/Optek Technology
Ventron No:
2850847-HCT7000M
Description:
MOSFET N-CH 60V 200MA SMD
ECAD Model:
Datasheet:
HCT7000M

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Specifications
TT Electronics/Optek Technology HCT7000M technical specifications, attributes, parameters and parts with similar specifications to TT Electronics/Optek Technology HCT7000M.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Number of Pins
    3
  • Supplier Device Package
    3-SMD
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    300mW Ta
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    200mA Ta
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±40V
  • Turn-Off Delay Time
    10 ns
  • Continuous Drain Current (ID)
    200mA
  • Gate to Source Voltage (Vgs)
    40V
  • Input Capacitance
    60pF
  • Drain to Source Resistance
    5Ohm
  • Rds On Max
    5 Ω
  • Height
    1.3716mm
  • Length
    3.175mm
  • Width
    2.667mm
  • RoHS Status
    Non-RoHS Compliant
Description
HCT7000M Overview
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

HCT7000M Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 10 ns
single MOSFETs transistor is 5Ohm
a 60V drain to source voltage (Vdss)


HCT7000M Applications
There are a lot of TT Electronics/Optek Technology
HCT7000M applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
HCT7000M More Descriptions
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-Oxide
Hct7000M |Tt Electronics/optek Technology HCT7000M
N- Channel Enhancement Mode Transisitor
N-CHANNEL ENHANCE.MODE TRANSIS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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