Fairchild/ON Semiconductor FQD5N50CTM

FQD5N50CTM Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 4A.Pulsed drain current is maximum rated peak drain current 16A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQD5N50CTM Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 16A.
a 500V drain to source voltage (Vdss)


FQD5N50CTM Applications
There are a lot of Rochester Electronics, LLC
FQD5N50CTM applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching