FQD5P20TM

Fairchild/ON Semiconductor FQD5P20TM

Part Number:
FQD5P20TM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585951-FQD5P20TM
Description:
MOSFET P-CH 200V 3.7A DPAK
ECAD Model:
Datasheet:
FQD5P20TM

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Specifications
Fairchild/ON Semiconductor FQD5P20TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD5P20TM.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    1.4Ohm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    -3.7A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 1.85A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    430pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Rise Time
    70ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    3.7A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    -200V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD5P20TM Description


This P-channel enhanced mode power MOSFET is produced using Fairchild's proprietary planar beam and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies. Application of Audio Amplifier DC Motor Control and variable switching Power supply.

FQD5P20TM is a P-channel enhanced mode power MOSFET which is produced using Fairchild's proprietary planar beam and DMOS technology.

FQD5P20TM Features

· -3.7 A, -200 V,RDs(on) = 1.4 Ω (Max.)@ VGs = -10 V,1, =-1.85 A
·Low Gate Charge(Typ.10nC)
· Low Crss( Typ.12 pF)100% Avalanche Tested
· RoHS Compliant
FQD5P20TM More Descriptions
P-Channel Power MOSFET, QFET®, -200 V, -3.7 A, 1.4 Ω, DPAK
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -200V, -3.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Comparison
The three parts on the right have similar specifications to FQD5P20TM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Reach Compliance Code
    Supplier Device Package
    Published
    View Compare
  • FQD5P20TM
    FQD5P20TM
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    1.4Ohm
    Other Transistors
    -200V
    MOSFET (Metal Oxide)
    GULL WING
    -3.7A
    R-PSSO-G2
    1
    2.5W Ta 45W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    9 ns
    P-Channel
    SWITCHING
    1.4 Ω @ 1.85A, 10V
    5V @ 250μA
    430pF @ 25V
    3.7A Tc
    13nC @ 10V
    70ns
    200V
    10V
    ±30V
    25 ns
    12 ns
    3.7A
    30V
    -200V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQD5N50TM
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    2.5W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 1.75A, 10V
    5V @ 250μA
    610pF @ 25V
    3.5A Tc
    17nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    NOT SPECIFIED
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    3.5A
    14A
    500V
    300 mJ
    -
    -
    -
  • FQD5N50TF
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    2.5W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 1.75A, 10V
    5V @ 250μA
    610pF @ 25V
    3.5A Tc
    17nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    NOT SPECIFIED
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    3.5A
    14A
    500V
    300 mJ
    unknown
    -
    -
  • FQD5N60CTF
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 49W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    2.5Ohm @ 1.4A, 10V
    4V @ 250μA
    670pF @ 25V
    2.8A Tc
    19nC @ 10V
    -
    600V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    2007
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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