Fairchild/ON Semiconductor FQD5P20TM
- Part Number:
- FQD5P20TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585951-FQD5P20TM
- Description:
- MOSFET P-CH 200V 3.7A DPAK
- Datasheet:
- FQD5P20TM
Fairchild/ON Semiconductor FQD5P20TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD5P20TM.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance1.4Ohm
- SubcategoryOther Transistors
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating-3.7A
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max2.5W Ta 45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time9 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 1.85A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds430pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.7A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time70ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)3.7A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage-200V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQD5P20TM Description
This P-channel enhanced mode power MOSFET is produced using Fairchild's proprietary planar beam and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies. Application of Audio Amplifier DC Motor Control and variable switching Power supply.
FQD5P20TM is a P-channel enhanced mode power MOSFET which is produced using Fairchild's proprietary planar beam and DMOS technology.
FQD5P20TM Features
· -3.7 A, -200 V,RDs(on) = 1.4 Ω (Max.)@ VGs = -10 V,1, =-1.85 A
·Low Gate Charge(Typ.10nC)
· Low Crss( Typ.12 pF)100% Avalanche Tested
· RoHS Compliant
This P-channel enhanced mode power MOSFET is produced using Fairchild's proprietary planar beam and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies. Application of Audio Amplifier DC Motor Control and variable switching Power supply.
FQD5P20TM is a P-channel enhanced mode power MOSFET which is produced using Fairchild's proprietary planar beam and DMOS technology.
FQD5P20TM Features
· -3.7 A, -200 V,RDs(on) = 1.4 Ω (Max.)@ VGs = -10 V,1, =-1.85 A
·Low Gate Charge(Typ.10nC)
· Low Crss( Typ.12 pF)100% Avalanche Tested
· RoHS Compliant
FQD5P20TM More Descriptions
P-Channel Power MOSFET, QFET®, -200 V, -3.7 A, 1.4 Ω, DPAK
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -200V, -3.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -200V, -3.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
The three parts on the right have similar specifications to FQD5P20TM.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Reach Compliance CodeSupplier Device PackagePublishedView Compare
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FQD5P20TMACTIVE (Last Updated: 1 day ago)4 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)QFET®e3yesActive1 (Unlimited)2EAR991.4OhmOther Transistors-200VMOSFET (Metal Oxide)GULL WING-3.7AR-PSSO-G212.5W Ta 45W TcSingleENHANCEMENT MODE2.5WDRAIN9 nsP-ChannelSWITCHING1.4 Ω @ 1.85A, 10V5V @ 250μA430pF @ 25V3.7A Tc13nC @ 10V70ns200V10V±30V25 ns12 ns3.7A30V-200V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------------
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----Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~150°C TJTape & Reel (TR)QFET®-yesObsolete1 (Unlimited)2----MOSFET (Metal Oxide)GULL WING-R-PSSO-G212.5W Ta 50W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING1.8 Ω @ 1.75A, 10V5V @ 250μA610pF @ 25V3.5A Tc17nC @ 10V-500V10V±30V----------ROHS3 Compliant-YESNOT SPECIFIEDSINGLENOT SPECIFIEDNOT SPECIFIED3COMMERCIALSINGLE WITH BUILT-IN DIODE3.5A14A500V300 mJ---
-
----Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~150°C TJTape & Reel (TR)QFET®-yesObsolete1 (Unlimited)2----MOSFET (Metal Oxide)GULL WING-R-PSSO-G212.5W Ta 50W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING1.8 Ω @ 1.75A, 10V5V @ 250μA610pF @ 25V3.5A Tc17nC @ 10V-500V10V±30V----------ROHS3 Compliant-YESNOT SPECIFIEDSINGLENOT SPECIFIEDNOT SPECIFIED3COMMERCIALSINGLE WITH BUILT-IN DIODE3.5A14A500V300 mJunknown--
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----Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)QFET®--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----2.5W Ta 49W Tc-----N-Channel-2.5Ohm @ 1.4A, 10V4V @ 250μA670pF @ 25V2.8A Tc19nC @ 10V-600V10V±30V-------------------------D-Pak2007
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