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FQD10N20CTM

Fairchild/ON Semiconductor FQD10N20CTM

Part Number:
FQD10N20CTM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478123-FQD10N20CTM
Description:
MOSFET N-CH 200V 7.8A DPAK
ECAD Model:
Datasheet:
FQD10N20CTM

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Specifications
Fairchild/ON Semiconductor FQD10N20CTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD10N20CTM.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    360mOhm
  • Additional Feature
    FAST SWITCHING
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    7.8A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    50W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    50W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    360m Ω @ 3.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    510pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    92ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    72 ns
  • Turn-Off Delay Time
    70 ns
  • Continuous Drain Current (ID)
    7.8A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    200V
  • Height
    2.3mm
  • Length
    6.6mm
  • Width
    6.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD10N20CTM Description
A patented planar stripe and DMOS technology are used to create the FQD10N20CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic light ballasts can all benefit from FQD10N20CTM.

FQD10N20CTM Features
Low Crss ( Typ. 40.5pF)
100% avalanche tested
Low gate charge ( Typ. 20nC)
7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A

FQD10N20CTM Applications
LED TV
CRT/RPTV
Other Industrial
FQD10N20CTM More Descriptions
Single N-Channel 200 V 0.36 Ohm 26 nC 50 W DMOS SMT Mosfet - TO-252-3
N-Channel Power MOSFET, QFET®, 200 V, 10 A, 360 mΩ, DPAK
MOSFET, N-CH, 200V, 7.8A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.8A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FQD10N20CTM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Published
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Finish
    Terminal Position
    Pin Count
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • FQD10N20CTM
    FQD10N20CTM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    360mOhm
    FAST SWITCHING
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    7.8A
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    50W Tc
    Single
    ENHANCEMENT MODE
    50W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    360m Ω @ 3.9A, 10V
    4V @ 250μA
    510pF @ 25V
    7.8A Tc
    26nC @ 10V
    92ns
    10V
    ±30V
    72 ns
    70 ns
    7.8A
    4V
    TO-252AA
    30V
    200V
    2.3mm
    6.6mm
    6.1mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQD11P06TF
    FQD11P06TF
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 38W Tc
    -
    -
    -
    -
    -
    P-Channel
    -
    185mOhm @ 4.7A, 10V
    4V @ 250μA
    550pF @ 25V
    9.4A Tc
    17nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    2016
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FQD10N20CTM vs FQD11P06TF
  • FQD16N15TM
    FQD16N15TM
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    unknown
    -
    NOT SPECIFIED
    R-PSSO-G2
    COMMERCIAL
    1
    2.5W Ta 55W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    160m Ω @ 5.9A, 10V
    4V @ 250μA
    910pF @ 25V
    11.8A Tc
    30nC @ 10V
    -
    10V
    ±25V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    150V
    YES
    MATTE TIN
    SINGLE
    3
    SINGLE WITH BUILT-IN DIODE
    11.8A
    0.16Ohm
    47.2A
    150V
    230 mJ
    FQD10N20CTM vs FQD16N15TM
  • FQD13N10TF
    FQD13N10TF
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 40W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    180mOhm @ 5A, 10V
    4V @ 250μA
    450pF @ 25V
    10A Tc
    16nC @ 10V
    -
    10V
    ±25V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    2016
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FQD10N20CTM vs FQD13N10TF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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