Fairchild/ON Semiconductor FQD19N10TM_F080
- Part Number:
- FQD19N10TM_F080
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586706-FQD19N10TM_F080
- Description:
- MOSFET N-CH 100V 15.6A DPAK
- ECAD Model:
-
- Datasheet:
- FQD19N10TM_F080
Fairchild/ON Semiconductor FQD19N10TM_F080 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD19N10TM_F080.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta 50W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs100mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15.6A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
FQD19N10TM_F080 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 780pF @ 25V maximal input capacitance.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQD19N10TM_F080 Features
a 100V drain to source voltage (Vdss)
FQD19N10TM_F080 Applications
There are a lot of ON Semiconductor
FQD19N10TM_F080 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 780pF @ 25V maximal input capacitance.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQD19N10TM_F080 Features
a 100V drain to source voltage (Vdss)
FQD19N10TM_F080 Applications
There are a lot of ON Semiconductor
FQD19N10TM_F080 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FQD19N10TM_F080 More Descriptions
MOSFET N-CH 100V 15.6A DPAK
The three parts on the right have similar specifications to FQD19N10TM_F080.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)View Compare
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FQD19N10TM_F080Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 50W TcN-Channel100mOhm @ 7.8A, 10V4V @ 250μA780pF @ 25V15.6A Tc25nC @ 10V100V10V±25V- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)160W TcN-Channel270mOhm @ 8A, 10V4V @ 250μA1080pF @ 25V16A Tc53.5nC @ 10V250V10V±30V
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®2016Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 38W TcP-Channel185mOhm @ 4.7A, 10V4V @ 250μA550pF @ 25V9.4A Tc17nC @ 10V60V10V±30V
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®2016Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 40W TcN-Channel180mOhm @ 5A, 10V4V @ 250μA450pF @ 25V10A Tc16nC @ 10V100V10V±25V
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