Fairchild/ON Semiconductor FGH80N60FDTU

Name: FGH80N60FDTU
Brand: Fairchild/ON Semiconductor
SKU: 2854499-FGH80N60FDTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FGH80N60FDTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2854499-FGH80N60FDTU

Description:: IGBT 600V 80A 290W TO247

ECAD Model:

Datasheet:: FGH80N60FDTU

Specifications

Fairchild/ON Semiconductor FGH80N60FDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH80N60FDTU.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
290W
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
21 ns
Power - Max
290W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
126 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
36 ns
JEDEC-95 Code
TO-247AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Turn On Time
74 ns
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Turn Off Time-Nom (toff)
201 ns
IGBT Type
Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
21ns/126ns
Switching Energy
1mJ (on), 520μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Fall Time-Max (tf)
100ns
Height
20.6mm
Length
15.6mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FGH80N60FDTU Description
FGH80N60FDTU provides the best performance for induction heating, telecommunications, ESS, and PFC applications that require low conduction and switching losses.

FGH80N60FDTU Features
? High Capacity for Current
? Saturation Voltage is Low: VCE(sat) = 1.8 V @ IC = 40 A
? Input Impedance Impedance Impedance Impedance Impedance Impedance
? Quick switchover
? RoHS (Restriction of Hazardous Substances)

FGH80N60FDTU Applications
PFC, Telecom, ESS, Induction Heating

FGH80N60FDTU More Descriptions

Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3 Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

Certification