Fairchild/ON Semiconductor FDU8874
- Part Number:
- FDU8874
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851555-FDU8874
- Description:
- MOSFET N-CH 30V 116A I-PAK
- ECAD Model:
-
- Datasheet:
- FDD8874, FDU8874
Fairchild/ON Semiconductor FDU8874 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDU8874.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishNOT SPECIFIED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.1m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.99pF @ 15V
- Current - Continuous Drain (Id) @ 25°C18A Ta 116A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)35A
- Drain-source On Resistance-Max0.0064Ohm
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)240 mJ
- RoHS StatusROHS3 Compliant
FDU8874 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.99pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 35A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDU8874 Features
the avalanche energy rating (Eas) is 240 mJ
a 30V drain to source voltage (Vdss)
FDU8874 Applications
There are a lot of Rochester Electronics, LLC
FDU8874 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.99pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 35A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDU8874 Features
the avalanche energy rating (Eas) is 240 mJ
a 30V drain to source voltage (Vdss)
FDU8874 Applications
There are a lot of Rochester Electronics, LLC
FDU8874 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
FDU8874 More Descriptions
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
Trans MOSFET N-CH 30V 18A 3-Pin(3 Tab) IPAK Tube
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
Trans MOSFET N-CH 30V 18A 3-Pin(3 Tab) IPAK Tube
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
The three parts on the right have similar specifications to FDU8874.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodeReach Compliance CodeView Compare
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FDU8874Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3NOT SPECIFIEDMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING5.1m Ω @ 35A, 10V2.5V @ 250μA2.99pF @ 15V18A Ta 116A Tc72nC @ 10V30V4.5V 10V±20V35A0.0064Ohm30V240 mJROHS3 Compliant--- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE70W TcENHANCEMENT MODE-N-ChannelSWITCHING8.2m Ω @ 35A, 10V2.5V @ 250μA1.7pF @ 15V15A Ta 73A Tc47nC @ 10V30V4.5V 10V±20V15A0.01Ohm30V95 mJROHS3 Compliante3unknown
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3NOT SPECIFIEDMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE160W TcENHANCEMENT MODE-N-ChannelSWITCHING3.9m Ω @ 35A, 10V2.5V @ 250μA5.16pF @ 15V21A Ta 160A Tc118nC @ 10V30V4.5V 10V±20V21A0.0044Ohm30V690 mJROHS3 Compliant-unknown
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE55W TcENHANCEMENT MODE-N-ChannelSWITCHING10m Ω @ 35A, 10V2.5V @ 250μA1.26pF @ 15V13A Ta 58A Tc31nC @ 10V30V4.5V 10V±20V35A0.013Ohm30V53 mJROHS3 Compliante3unknown
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