Fairchild/ON Semiconductor FDU8870
- Part Number:
- FDU8870
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851716-FDU8870
- Description:
- MOSFET N-CH 30V 160A I-PAK
- ECAD Model:
-
- Datasheet:
- FDD8870, FDU8870
Fairchild/ON Semiconductor FDU8870 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDU8870.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishNOT SPECIFIED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max160W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.9m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5.16pF @ 15V
- Current - Continuous Drain (Id) @ 25°C21A Ta 160A Tc
- Gate Charge (Qg) (Max) @ Vgs118nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)21A
- Drain-source On Resistance-Max0.0044Ohm
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)690 mJ
- RoHS StatusROHS3 Compliant
FDU8870 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 690 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.16pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 21A.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDU8870 Features
the avalanche energy rating (Eas) is 690 mJ
a 30V drain to source voltage (Vdss)
FDU8870 Applications
There are a lot of Rochester Electronics, LLC
FDU8870 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 690 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.16pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 21A.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDU8870 Features
the avalanche energy rating (Eas) is 690 mJ
a 30V drain to source voltage (Vdss)
FDU8870 Applications
There are a lot of Rochester Electronics, LLC
FDU8870 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
FDU8870 More Descriptions
MOSFET N-CH 30V 160A I-PAK
MOSFETs 30V N-Channel PowerTrench
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFETs 30V N-Channel PowerTrench
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
The three parts on the right have similar specifications to FDU8870.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodePublishedView Compare
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FDU8870Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3NOT SPECIFIEDMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE160W TcENHANCEMENT MODEN-ChannelSWITCHING3.9m Ω @ 35A, 10V2.5V @ 250μA5.16pF @ 15V21A Ta 160A Tc118nC @ 10V30V4.5V 10V±20V21A0.0044Ohm30V690 mJROHS3 Compliant--- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE70W TcENHANCEMENT MODEN-ChannelSWITCHING8.2m Ω @ 35A, 10V2.5V @ 250μA1.7pF @ 15V15A Ta 73A Tc47nC @ 10V30V4.5V 10V±20V15A0.01Ohm30V95 mJROHS3 Compliante3-
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubePowerTrench®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE55W TcENHANCEMENT MODEN-ChannelSWITCHING10m Ω @ 35A, 10V2.5V @ 250μA1.26pF @ 15V13A Ta 58A Tc31nC @ 10V30V4.5V 10V±20V35A0.013Ohm30V53 mJROHS3 Compliante3-
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~175°C TJTubePowerTrench®-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-NOT SPECIFIEDcompliantNOT SPECIFIED-----50W Tc-N-Channel-11m Ω @ 35A, 10V2.5V @ 250μA1220pF @ 13V35A Tc25nC @ 10V25V4.5V 10V±20V----RoHS Compliant-2009
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