Fairchild/ON Semiconductor FDU8780_F071
- Part Number:
- FDU8780_F071
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554590-FDU8780_F071
- Description:
- MOSFET N-CH 25V 35A IPAK
- Datasheet:
- FDD, FDU8780
Fairchild/ON Semiconductor FDU8780_F071 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDU8780_F071.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max50W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.5m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1440pF @ 13V
- Current - Continuous Drain (Id) @ 25°C35A Tc
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusRoHS Compliant
FDU8780_F071 Overview
A device's maximal input capacitance is 1440pF @ 13V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDU8780_F071 Features
a 25V drain to source voltage (Vdss)
FDU8780_F071 Applications
There are a lot of ON Semiconductor
FDU8780_F071 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1440pF @ 13V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDU8780_F071 Features
a 25V drain to source voltage (Vdss)
FDU8780_F071 Applications
There are a lot of ON Semiconductor
FDU8780_F071 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDU8780_F071 More Descriptions
25V,35A,8.5 OHM, NCH, IPAK, POWER TRENCH MOSFET
OEMs, CMs ONLY (NO BROKERS)
Contact for details
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to FDU8780_F071.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Case ConnectionPulsed Drain Current-Max (IDM)View Compare
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FDU8780_F071Through HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubePowerTrench®2006Obsolete1 (Unlimited)MOSFET (Metal Oxide)NOT SPECIFIEDcompliantNOT SPECIFIED50W TcN-Channel8.5m Ω @ 35A, 10V2.5V @ 250μA1440pF @ 13V35A Tc29nC @ 10V25V4.5V 10V±20VRoHS Compliant---------------------
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubePowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED55W TcN-Channel10m Ω @ 35A, 10V2.5V @ 250μA1.26pF @ 15V13A Ta 58A Tc31nC @ 10V30V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3MATTE TINSINGLE3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING35A0.013Ohm30V53 mJ--
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubePowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED110W TcN-Channel5.1m Ω @ 35A, 10V2.5V @ 250μA2.99pF @ 15V18A Ta 116A Tc72nC @ 10V30V4.5V 10V±20VROHS3 CompliantNOSILICON-yes3NOT SPECIFIEDSINGLE3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING35A0.0064Ohm30V240 mJISOLATED-
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubePowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED39W TcN-Channel14m Ω @ 35A, 10V2.5V @ 250μA845pF @ 13V35A Tc18nC @ 10V25V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3MATTE TINSINGLE3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING35A0.014Ohm25V24 mJ-145A
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