Fairchild/ON Semiconductor FDS9435A
- Part Number:
- FDS9435A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479803-FDS9435A
- Description:
- MOSFET P-CH 30V 5.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- FDS9435A
Fairchild/ON Semiconductor FDS9435A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS9435A.
- Lifecycle StatusACTIVE (Last Updated: 2 hours ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-5.3A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 5.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds528pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.3A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)-5.3A
- Threshold Voltage-1.7V
- Gate to Source Voltage (Vgs)25V
- Drain-source On Resistance-Max0.05Ohm
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- Max Junction Temperature (Tj)175°C
- Nominal Vgs-1.7 V
- Height1.75mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQB1P50TM Description
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
FDS9435A More Descriptions
P-Channel 30 V 50 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
P-Channel PowerTrench® MOSFET, 30V, -5.3A, 50mΩ
Trans MOSFET P Channel 30 Volt 5.3A 8-Pin SOIC N Tape and Reel
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
P-Channel PowerTrench® MOSFET, 30V, -5.3A, 50mΩ
Trans MOSFET P Channel 30 Volt 5.3A 8-Pin SOIC N Tape and Reel
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
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