Fairchild/ON Semiconductor FDS8984

Name: FDS8984
Brand: Fairchild/ON Semiconductor
SKU: 2473572-FDS8984
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8984

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473572-FDS8984

Description:: MOSFET 2N-CH 30V 7A 8-SOIC

ECAD Model:

Datasheet:: FDS8984

Specifications

Fairchild/ON Semiconductor FDS8984 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8984.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
23MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
1.6W
Terminal Form
GULL WING
Current Rating
7A
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
5 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
635pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Rise Time
9ns
Fall Time (Typ)
9 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
7mA
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
30A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.7 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON Semiconductor FDS8984 is a MOSFET 2N-CH 30V 7A 8-SOIC array. This device is designed to provide high-speed switching and low on-resistance in a small package. It features a low gate charge and low input capacitance, making it ideal for high-frequency applications. The FDS8984 is capable of handling up to 7A of continuous current and 30V of drain-source voltage. It is also RoHS compliant and has a maximum junction temperature of 175°C. This device is suitable for use in a variety of applications, including power management, motor control, and automotive systems.

FDS8984 More Descriptions

Transistor MOSFET Array Dual N-CH 30V 7A 8-Pin SOIC T/R - Tape and Reel
N-Channel 30 V 23 mOhm SMT PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Product Comparison

The three parts on the right have similar specifications to FDS8984.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Termination

Max Operating Temperature

Min Operating Temperature

Terminal Position

Power - Max

Current - Continuous Drain (Id) @ 25°C

Polarity/Channel Type

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Drain to Source Voltage (Vdss)

View Compare
FDS8984

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e3

yes

Active

1 (Unlimited)

8

EAR99

23MOhm

FET General Purpose Power

30V

1.6W

GULL WING

7A

2

Dual

ENHANCEMENT MODE

1.6W

5 ns

2 N-Channel (Dual)

SWITCHING

23m Ω @ 7A, 10V

2.5V @ 250μA

635pF @ 15V

13nC @ 10V

9ns

9 ns

42 ns

7mA

1.7V

20V

7A

30V

30A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.7 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FDS8958A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 15 hours ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-

-

Tape & Reel (TR)

PowerTrench®

2007

e3

yes

Active

1 (Unlimited)

8

-

28mOhm

-

-

2W

GULL WING

7A

2

-

ENHANCEMENT MODE

2W

-

N and P-Channel

SWITCHING

28m Ω @ 7A, 10V

3V @ 250μA

575pF @ 15V

16nC @ 10V

13ns

9 ns

14 ns

7A

1.9V

20V

7A

30V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.9 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

SMD/SMT

150°C

-55°C

DUAL

900mW

7A 5A

N-CHANNEL AND P-CHANNEL

30V

54 mJ

-

FDS8984 vs FDS8958A
FDS8978

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

-

-

Active

1 (Unlimited)

-

-

18MOhm

-

-

1.6W

-

-

2

Dual

-

1.6W

7 ns

2 N-Channel (Dual)

-

18m Ω @ 7.5A, 10V

2.5V @ 250μA

1270pF @ 15V

26nC @ 10V

37ns

37 ns

48 ns

7.5A

2.5V

20V

-

30V

-

-

Logic Level Gate

-

1.5mm

5mm

4mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

30V

FDS8984 vs FDS8978
FDS8949

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

EAR99

29mOhm

FET General Purpose Power

40V

2W

GULL WING

6A

2

Dual

ENHANCEMENT MODE

2W

9 ns

2 N-Channel (Dual)

-

29m Ω @ 6A, 10V

3V @ 250μA

955pF @ 20V

11nC @ 5V

5ns

3 ns

23 ns

6A

1.9V

20V

6A

40V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.9 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

SMD/SMT

-

-

-

-

-

-

40V

-

-

FDS8984 vs FDS8949