Fairchild/ON Semiconductor FDS8876

Name: FDS8876
Brand: Fairchild/ON Semiconductor
SKU: 2481680-FDS8876
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8876

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481680-FDS8876

Description:: MOSFET N-CH 30V 12.5A 8SOIC

ECAD Model:

Datasheet:: FDS8876

Specifications

Fairchild/ON Semiconductor FDS8876 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8876.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
8.2MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
12.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.2m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12.5A Ta
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Rise Time
34ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
53 ns
Continuous Drain Current (ID)
12.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Height
1.5mm
Length
5mm
Width
4mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS8876 Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low rDS(on), and quick switching speed have all been optimized for.

FDS8876 Features
rDS(on) = 8.2m?, VGS = 10V, ID = 12.5A
rDS(on) = 10.2m?, VGS = 4.5V, ID = 11.4A
High performance trench technology for extremely low rDS(on)
Low gate charge
High power and current handling capability
RoHS Compliant

FDS8876 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDS8876 More Descriptions

N-Channel 30 V 8.2 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Tape and Reel
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Certification