Fairchild/ON Semiconductor FDS8433A

Name: FDS8433A
Brand: Fairchild/ON Semiconductor
SKU: 2848656-FDS8433A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8433A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848656-FDS8433A

Description:: MOSFET P-CH 20V 5A 8-SOIC

ECAD Model:

Datasheet:: FDS8433A

Specifications

Fairchild/ON Semiconductor FDS8433A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8433A.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
47MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-5A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
8 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
47m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1130pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5A Ta
Gate Charge (Qg) (Max) @ Vgs
28nC @ 5V
Rise Time
23ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
90 ns
Turn-Off Delay Time
260 ns
Continuous Drain Current (ID)
5mA
Threshold Voltage
-600mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
-20V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS8433A Description
FDS8433A is a Single P-Channel 2.5V Specified MOSFET. The onsemi FDS8433A P-Channel enhancement mode power field effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This high-density process is specially tailored to minimize on-state resistance and provide superior switching performance.

FDS8433A Features
-5 A, -20 V
RDS(on) = 0.047 Ω @ VGS = -4.5 V
RDS(on) = 0.070 Ω @ VGS = -2.5 V
Fast switching speed
High-density cell design for extremely low RDS(ON)
High power and current handling capability

FDS8433A Applications
Load Switch
cellular phones
laptop computers
photovoltaic system
Battery Protection

FDS8433A More Descriptions

Single P-Channel 20 V 47 mOhm 2.5V Specified Mosfet - SOIC-8
P-Channel MOSFET, 2.5V Specified, -20V, -5A, 47mΩ
Trans MOSFET P-CH 20V 5A 8-Pin SOIC N T/R
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS8433A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1V
This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.

Certification