Fairchild/ON Semiconductor FDS7082N3

Name: FDS7082N3
Brand: Fairchild/ON Semiconductor
SKU: 2488572-FDS7082N3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS7082N3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488572-FDS7082N3

Description:: MOSFET N-CH 30V 17.5A 8-SOIC

ECAD Model:

Datasheet:: FDS7082N3

Specifications

Fairchild/ON Semiconductor FDS7082N3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS7082N3.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
NICKEL PALLADIUM GOLD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.271pF @ 15V
Current - Continuous Drain (Id) @ 25°C
17.5A Ta
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
17.5A
Drain-source On Resistance-Max
0.006Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

FDS7082N3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.271pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 17.5A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDS7082N3 Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)

FDS7082N3 Applications
There are a lot of Rochester Electronics, LLC
FDS7082N3 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

FDS7082N3 More Descriptions

MOSFET N-CH 30V 17.5A 8-SOIC - Rail/Tube
MOSFETs 30V N-Ch PowerTrench
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Contact for details

Product Comparison

The three parts on the right have similar specifications to FDS7082N3.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

View Compare
FDS7082N3

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6m Ω @ 17.5A, 10V

3V @ 250μA

2.271pF @ 15V

17.5A Ta

53nC @ 10V

30V

4.5V 10V

±20V

17.5A

0.006Ohm

60A

30V

ROHS3 Compliant

-
FDS7764A

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

-

ENHANCEMENT MODE

-

N-Channel

SWITCHING

7.5m Ω @ 15A, 4.5V

2V @ 250μA

3.451pF @ 15V

15A Ta

40nC @ 4.5V

30V

-

-

15A

0.0075Ohm

50A

30V

ROHS3 Compliant

FDS7082N3 vs FDS7764A
FDS7066ASN3

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

4.8m Ω @ 19A, 10V

3V @ 1mA

2.46pF @ 15V

19A Ta

62nC @ 10V

30V

4.5V 10V

±20V

19A

0.0048Ohm

60A

30V

ROHS3 Compliant

FDS7082N3 vs FDS7066ASN3
FDS7098N3

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

yes

Obsolete

1 (Unlimited)

8

NOT SPECIFIED

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9m Ω @ 14A, 10V

3V @ 250μA

1.587pF @ 15V

14A Ta

22nC @ 5V

30V

4.5V 10V

±20V

14A

0.009Ohm

60A

30V

ROHS3 Compliant

FDS7082N3 vs FDS7098N3