Fairchild/ON Semiconductor FDS7079ZN3
- Part Number:
- FDS7079ZN3
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2488571-FDS7079ZN3
- Description:
- MOSFET P-CH 30V 16A 8-SOIC
- Datasheet:
- FDS7079ZN3
Fairchild/ON Semiconductor FDS7079ZN3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS7079ZN3.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.13W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs7.5mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3630pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs55nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
FDS7079ZN3 MOSFET Description
Advanced SO8 FLMP packaging with P Channel MOSFET FDS7079ZN3 delivers a device with incredibly low thermal impedance and enhanced electrical performance. Applications for this device include multi-cell battery charging and protection, as well as load reversal and protection in notebook battery packs.
FDS7079ZN3 MOSFET Features
ESD protection diode (note 3) ESD rating: 4kV High-performance trench technology Very low RDS(ON) FLMP SO-8 package for enhanced thermal performance
FDS7079ZN3 MOSFET Applications
Battery-Powered Equipment Load Switching PC UPS Multi-Cell Battery Protection
Advanced SO8 FLMP packaging with P Channel MOSFET FDS7079ZN3 delivers a device with incredibly low thermal impedance and enhanced electrical performance. Applications for this device include multi-cell battery charging and protection, as well as load reversal and protection in notebook battery packs.
FDS7079ZN3 MOSFET Features
ESD protection diode (note 3) ESD rating: 4kV High-performance trench technology Very low RDS(ON) FLMP SO-8 package for enhanced thermal performance
FDS7079ZN3 MOSFET Applications
Battery-Powered Equipment Load Switching PC UPS Multi-Cell Battery Protection
FDS7079ZN3 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin FLMP SOIC T/R
30V,PCH, SO8 FLMP , POWER TRENCH MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-16A; On Resistance, Rds(on):7.5mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SO-8 ;RoHS Compliant: Yes
30V,PCH, SO8 FLMP , POWER TRENCH MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-16A; On Resistance, Rds(on):7.5mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SO-8 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to FDS7079ZN3.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusPulsed Drain Current-Max (IDM)View Compare
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FDS7079ZN3Surface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTape & Reel (TR)PowerTrench®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.13W TaP-Channel7.5mOhm @ 16A, 10V3V @ 250μA3630pF @ 15V16A Ta55nC @ 5V30V4.5V 10V±25V-----------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel5.5m Ω @ 15A, 10V3V @ 250μA3.514pF @ 15V15A Ta55nC @ 5V30V4.5V 10V±20VYESSILICONe3yes8MATTE TINDUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING15A0.0055Ohm30VROHS3 Compliant-
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)-N-Channel7.5m Ω @ 15A, 4.5V2V @ 250μA3.451pF @ 15V15A Ta40nC @ 4.5V30V--YESSILICONe3yes8MATTE TINDUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING15A0.0075Ohm30VROHS3 Compliant50A
-
Surface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTape & Reel (TR)PowerTrench®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.13W TaN-Channel8mOhm @ 16A, 10V3V @ 1mA2800pF @ 15V16A Ta35nC @ 5V30V4.5V 10V±16V----------------------
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