Fairchild/ON Semiconductor FDS7064N7
- Part Number:
- FDS7064N7
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2488561-FDS7064N7
- Description:
- MOSFET N-CH 30V 16.5A 8-SOIC
- Datasheet:
- FDS7064N7
Fairchild/ON Semiconductor FDS7064N7 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS7064N7.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishNICKEL PALLADIUM GOLD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3W Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 16.5A, 4.5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3.355pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16.5A Ta
- Gate Charge (Qg) (Max) @ Vgs48nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V
- Vgs (Max)±12V
- Drain Current-Max (Abs) (ID)16.5A
- Drain-source On Resistance-Max0.007Ohm
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDS7064N7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3.355pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [16.5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V).
FDS7064N7 Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7064N7 Applications
There are a lot of Rochester Electronics, LLC
FDS7064N7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3.355pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [16.5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V).
FDS7064N7 Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7064N7 Applications
There are a lot of Rochester Electronics, LLC
FDS7064N7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDS7064N7 More Descriptions
MOSFET N-CH 30V 16.5A 8-SOIC
30V/12V, 7MO, NCH, SINGLE, SO8 FLMP, 300A GOX, PTII
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16.5A; On Resistance, Rds(on):0.007ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:-100V RoHS Compliant: Yes
30V/12V, 7MO, NCH, SINGLE, SO8 FLMP, 300A GOX, PTII
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16.5A; On Resistance, Rds(on):0.007ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:-100V RoHS Compliant: Yes
The three parts on the right have similar specifications to FDS7064N7.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusSupplier Device PackagePublishedView Compare
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FDS7064N7Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEDRAINN-ChannelSWITCHING7m Ω @ 16.5A, 4.5V2V @ 250μA3.355pF @ 15V16.5A Ta48nC @ 4.5V30V4.5V±12V16.5A0.007Ohm60A30VROHS3 Compliant---
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-yesObsolete1 (Unlimited)8NOT SPECIFIEDMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEDRAINN-ChannelSWITCHING9m Ω @ 14A, 10V3V @ 250μA1.587pF @ 15V14A Ta22nC @ 5V30V4.5V 10V±20V14A0.009Ohm60A30VROHS3 Compliant--
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Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)PowerTrench®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------3W Ta--N-Channel-4.5mOhm @ 23A, 10V3V @ 250μA4973pF @ 15V23A Ta69nC @ 5V30V4.5V 10V±16V-----8-SO2004
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Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)PowerTrench®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------3.13W Ta--N-Channel-8mOhm @ 16A, 10V3V @ 1mA2800pF @ 15V16A Ta35nC @ 5V30V4.5V 10V±16V-----8-SO2004
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