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FDS5692Z

Fairchild/ON Semiconductor FDS5692Z

Part Number:
FDS5692Z
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813746-FDS5692Z
Description:
MOSFET N-CH 50V 5.8A 8-SOIC
ECAD Model:
Datasheet:
FDS5692Z

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Specifications
Fairchild/ON Semiconductor FDS5692Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS5692Z.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    UltraFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    FAST SWITCHING
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 5.8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.025pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    5.8A
  • Drain-source On Resistance-Max
    0.024Ohm
  • DS Breakdown Voltage-Min
    50V
  • RoHS Status
    ROHS3 Compliant
Description
FDS5692Z Overview
The maximum input capacitance of this device is 1.025pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 5.8A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 50V.The drain-to-source voltage (Vdss) of this transistor needs to be at 50V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

FDS5692Z Features
a 50V drain to source voltage (Vdss)


FDS5692Z Applications
There are a lot of Rochester Electronics, LLC
FDS5692Z applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
FDS5692Z More Descriptions
Trans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R
MOSFETs 50V N-Ch UltraFET PowerTrench MOSFET
50V,5.8A,24OHM NCH ULTRAFET TRENCH MOSFET
This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Product Comparison
The three parts on the right have similar specifications to FDS5692Z.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Published
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Contact Plating
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDS5692Z
    FDS5692Z
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    UltraFET™
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    FAST SWITCHING
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    24m Ω @ 5.8A, 10V
    3V @ 250μA
    1.025pF @ 25V
    5.8A Ta
    25nC @ 10V
    50V
    4.5V 10V
    ±20V
    5.8A
    0.024Ohm
    50V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS5680
    FDS5680
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    8
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    20m Ω @ 8A, 10V
    4V @ 250μA
    1850pF @ 15V
    8A Ta
    42nC @ 10V
    -
    6V 10V
    ±20V
    8A
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    11 Weeks
    Surface Mount
    8
    130mg
    1999
    SMD/SMT
    EAR99
    20mOhm
    FET General Purpose Power
    60V
    8A
    Single
    2.5W
    13 ns
    8ns
    32 ns
    16 ns
    8A
    2.5V
    20V
    60V
    60V
    2.5 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    FDS5692Z vs FDS5680
  • FDS5351
    FDS5351
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    8
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    35m Ω @ 6.1A, 10V
    3V @ 250μA
    1310pF @ 30V
    6.1A Ta
    27nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    Surface Mount
    8
    130mg
    2006
    -
    EAR99
    35MOhm
    FET General Purpose Power
    -
    -
    Single
    5W
    8 ns
    3ns
    2 ns
    21 ns
    6.1A
    2V
    20V
    60V
    -
    2 V
    1.57mm
    4.9mm
    3.9mm
    No SVHC
    No
    Lead Free
    30A
    73 mJ
    -
    -
    -
    FDS5692Z vs FDS5351
  • FDS5672
    FDS5672
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    10m Ω @ 12A, 10V
    4V @ 250μA
    2200pF @ 25V
    12A Tc
    45nC @ 10V
    -
    6V 10V
    ±20V
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    8
    130mg
    2001
    -
    EAR99
    10MOhm
    FET General Purpose Power
    60V
    12A
    Single
    2.5W
    13 ns
    20ns
    14 ns
    35 ns
    12mA
    4V
    20V
    60V
    -
    4 V
    1.75mm
    5mm
    4mm
    No SVHC
    No
    Lead Free
    -
    -
    Tin
    1
    150°C
    FDS5692Z vs FDS5672
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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