Fairchild/ON Semiconductor FDS5690

Name: FDS5690
Brand: Fairchild/ON Semiconductor
SKU: 2483875-FDS5690
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS5690

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2483875-FDS5690

Description:: MOSFET N-CH 60V 7A 8SOIC

ECAD Model:

Datasheet:: FDS5690

Specifications

Fairchild/ON Semiconductor FDS5690 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS5690.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
9 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
28mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
7A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1107pF @ 30V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
7A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
60V
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS5690 Description
The FDS5690 N-channel MOSFET is made with ON Semiconductor's innovative PowerTrench technology, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance. It is ideal for low-voltage and battery-powered applications that demand low in-line power loss and quick switching, according to FDS5690 datasheet.

FDS5690 Features
Fast switching speed.
Low gate charge (23nC typical).
High power and current handling capability
High-performance trench technology for extremely low RDS(ON).
7 A, 60 V. RDS(on) = 0.028 ? @ VGS = 10 V RDS(on) = 0.033 ? @ VGS = 6 V.

FDS5690 Applications
Motor drives
DC/DC converter

FDS5690 More Descriptions

N-Channel PowerTrench® MOSFET, 60V, 7A, 28mΩ
N-Channel 60 V 28 mOhm PowerTrench Mosfet SOIC-8
Trans MOSFET N-CH 60V 7A 8-Pin SOIC N T/R
MOSFET, N-CH, 60V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.022ohm; Rds(on; Available until stocks are exhausted Alternative available
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Product Comparison

The three parts on the right have similar specifications to FDS5690.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Published

Termination

Terminal Finish

Additional Feature

Threshold Voltage

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Supplier Device Package

Drain to Source Voltage (Vdss)

Number of Channels

Max Junction Temperature (Tj)

View Compare
FDS5690

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

9 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

8

EAR99

28mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

7A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

10 ns

N-Channel

SWITCHING

28m Ω @ 7A, 10V

4V @ 250μA

1107pF @ 30V

7A Ta

32nC @ 10V

9ns

6V 10V

±20V

10 ns

24 ns

7A

20V

7A

60V

1.5mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS5680

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

11 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

8

EAR99

20mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

8A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

13 ns

N-Channel

SWITCHING

20m Ω @ 8A, 10V

4V @ 250μA

1850pF @ 15V

8A Ta

42nC @ 10V

8ns

6V 10V

±20V

32 ns

16 ns

8A

20V

8A

60V

1.5mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

1999

SMD/SMT

Tin (Sn)

LOGIC LEVEL COMPATIBLE

2.5V

60V

2.5 V

No SVHC

-

-

-

-

FDS5690 vs FDS5680
FDS5682

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

2.5W Ta

-

-

-

-

N-Channel

-

21mOhm @ 7.5A, 10V

2V @ 250μA

1650pF @ 25V

7.5A Ta

35nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

2001

-

-

-

-

-

-

-

8-SOIC

60V

-

-

FDS5690 vs FDS5682
FDS5672

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

8

EAR99

10MOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

12A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

13 ns

N-Channel

SWITCHING

10m Ω @ 12A, 10V

4V @ 250μA

2200pF @ 25V

12A Tc

45nC @ 10V

20ns

6V 10V

±20V

14 ns

35 ns

12mA

20V

-

60V

1.75mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

2001

-

-

-

4V

-

4 V

No SVHC

-

-

1

150°C

FDS5690 vs FDS5672