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FDS5670

Fairchild/ON Semiconductor FDS5670

Part Number:
FDS5670
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849214-FDS5670
Description:
MOSFET N-CH 60V 10A 8-SOIC
ECAD Model:
Datasheet:
FDS5670

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Specifications
Fairchild/ON Semiconductor FDS5670 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS5670.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    14MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    10A
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Voltage
    60V
  • Power Dissipation-Max
    2.5W Ta
  • Current
    10A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    23 ns
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    10A
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    2.4 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS5670 Description
The FDS5670 is an N-channel MOSFET produced using PowerTrench? process. The  FDS5670 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.

FDS5670 Features
10 A, 60 V
RDS(ON) = 0.014 Ω @ VGS = 10 V
RDS(ON) = 0.017 Ω @ VGS = 6 V
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability

FDS5670 Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDS5670 More Descriptions
N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ
N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8
Trans MOSFET N-CH 60V 10A 8-Pin SOIC N T/R - Tape and Reel
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Product Comparison
The three parts on the right have similar specifications to FDS5670.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Configuration
    Voltage
    Power Dissipation-Max
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Element Configuration
    Drain Current-Max (Abs) (ID)
    Terminal Finish
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDS5670
    FDS5670
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    1999
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    14MOhm
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    10A
    1
    SINGLE WITH BUILT-IN DIODE
    60V
    2.5W Ta
    10A
    ENHANCEMENT MODE
    2.5W
    16 ns
    N-Channel
    SWITCHING
    14m Ω @ 10A, 10V
    4V @ 250μA
    2900pF @ 15V
    10A Ta
    70nC @ 10V
    10ns
    6V 10V
    ±20V
    23 ns
    50 ns
    10A
    2.4V
    20V
    60V
    60V
    2.4 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS5690
    FDS5690
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    28mOhm
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    7A
    1
    -
    -
    2.5W Ta
    -
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    28m Ω @ 7A, 10V
    4V @ 250μA
    1107pF @ 30V
    7A Ta
    32nC @ 10V
    9ns
    6V 10V
    ±20V
    10 ns
    24 ns
    7A
    -
    20V
    60V
    -
    -
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    130mg
    Single
    7A
    -
    -
    -
    -
    -
    FDS5670 vs FDS5690
  • FDS5351
    FDS5351
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    35MOhm
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    -
    5W Ta
    -
    ENHANCEMENT MODE
    5W
    8 ns
    N-Channel
    SWITCHING
    35m Ω @ 6.1A, 10V
    3V @ 250μA
    1310pF @ 30V
    6.1A Ta
    27nC @ 10V
    3ns
    4.5V 10V
    ±20V
    2 ns
    21 ns
    6.1A
    2V
    20V
    60V
    -
    2 V
    1.57mm
    4.9mm
    3.9mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    130mg
    Single
    -
    Tin (Sn)
    30A
    73 mJ
    -
    -
    FDS5670 vs FDS5351
  • FDS5672
    FDS5672
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    10MOhm
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    12A
    1
    -
    -
    2.5W Ta
    -
    ENHANCEMENT MODE
    2.5W
    13 ns
    N-Channel
    SWITCHING
    10m Ω @ 12A, 10V
    4V @ 250μA
    2200pF @ 25V
    12A Tc
    45nC @ 10V
    20ns
    6V 10V
    ±20V
    14 ns
    35 ns
    12mA
    4V
    20V
    60V
    -
    4 V
    1.75mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    130mg
    Single
    -
    -
    -
    -
    1
    150°C
    FDS5670 vs FDS5672
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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