Fairchild/ON Semiconductor FDS2582

Name: FDS2582
Brand: Fairchild/ON Semiconductor
SKU: 2478208-FDS2582
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS2582

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478208-FDS2582

Description:: MOSFET N-CH 150V 4.1A 8SOIC

ECAD Model:

Datasheet:: FDS2582

Specifications

Fairchild/ON Semiconductor FDS2582 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS2582.

Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Factory Lead Time
11 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2002
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
66MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
4.1A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
66m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1290pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.1A Ta
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
4.1A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Avalanche Energy Rating (Eas)
252 mJ
Nominal Vgs
4 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS2582 Descritption

The FDS2582 is a P-channel MOSFET manufactured by Fairchild Semiconductor using the PowerTrench? technology. It can be used in DC-to-DC converters, off-line UPS systems, and high voltage synchronous rectifier applications.

FDS2582 Features

Low Qrr body diode
Optimized efficiency at high frequencies
UIS Capability (single pulse and repetitive pulse) formerly developmental type 82855
Low miller charge

FDS2582 Applications

Automotive
Power Management

FDS2582 More Descriptions

Trans MOSFET N-CH 150V 4.1A Automotive 8-Pin SOIC N T/R
N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ
N-Channel 150 V 66 mOhm PowerTrench® Mosfet - SOIC-8

Product Comparison

The three parts on the right have similar specifications to FDS2582.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Case Connection

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Reach Compliance Code

View Compare
FDS2582

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 23 hours ago)

11 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2002

e4

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

66MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

150V

MOSFET (Metal Oxide)

DUAL

GULL WING

4.1A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

11 ns

N-Channel

SWITCHING

66m Ω @ 4.1A, 10V

4V @ 250μA

1290pF @ 25V

4.1A Ta

25nC @ 10V

19ns

6V 10V

±20V

26 ns

36 ns

4.1A

4V

20V

150V

150V

252 mJ

4 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS2070N3

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

-

NICKEL PALLADIUM GOLD

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

78m Ω @ 4.1A, 10V

4V @ 250μA

1.884pF @ 75V

4.1A Ta

53nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

DRAIN

150V

4.1A

0.078Ohm

150V

-

FDS2582 vs FDS2070N3
FDS2170N3

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

-

NICKEL PALLADIUM GOLD

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

3W Ta

-

-

-

-

N-Channel

SWITCHING

128m Ω @ 3A, 10V

4.5V @ 250μA

1.292pF @ 100V

3A Ta

36nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

DRAIN

200V

-

0.128Ohm

-

unknown

FDS2582 vs FDS2170N3
FDS2670

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 23 hours ago)

6 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

8

-

EAR99

130MOhm

Tin (Sn)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

DUAL

GULL WING

3A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

13 ns

N-Channel

SWITCHING

130m Ω @ 3A, 10V

4.5V @ 250μA

1228pF @ 100V

3A Ta

43nC @ 10V

8ns

10V

±20V

25 ns

30 ns

3A

-

20V

200V

-

-

-

1.5mm

5mm

4mm

-

-

ROHS3 Compliant

Lead Free

-

NOT SPECIFIED

NOT SPECIFIED

-

-

Not Qualified

-

-

-

3A

-

-

-

FDS2582 vs FDS2670