Fairchild/ON Semiconductor FDP8896

Name: FDP8896
Brand: Fairchild/ON Semiconductor
SKU: 2483071-FDP8896
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP8896

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2483071-FDP8896

Description:: MOSFET N-CH 30V 92A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP8896 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP8896.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
5.9MOhm
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
92A
Number of Elements
1
Voltage
30V
Power Dissipation-Max
80W Tc
Element Configuration
Single
Current
60A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
80W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.9m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2525pF @ 15V
Current - Continuous Drain (Id) @ 25°C
16A Ta 92A Tc
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Rise Time
103ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
44 ns
Turn-Off Delay Time
56 ns
Continuous Drain Current (ID)
92A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
74 mJ
Height
9.4mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP8896 Description
FDP8896 is a kind of N-channel PowerTrench? MOSFET manufactured by ON Semiconductor based on high-performance trench technology for low RDS (on), low gate charge, and fast switching speed. It is specifically designed to improve the overall efficiency of DC/DC converters based on either synchronous or conventional switching PWM controllers.

FDP8896 Features
Low gate charge
Low on-state resistance
Low RDS (on)
Fast switching speed
Available in the TO-220AB package

FDP8896 Applications
DC/DC converters
Synchronous rectification
Uninterruptible power supplies

FDP8896 More Descriptions

RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
Trans MOSFET N-CH 30V 16A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Product Comparison

The three parts on the right have similar specifications to FDP8896.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Weight

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Pulsed Drain Current-Max (IDM)

Input Capacitance

FET Technology

Drain to Source Resistance

Rds On Max

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDP8896

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

5.9MOhm

Tin (Sn)

8541.29.00.95

FET General Purpose Power

30V

MOSFET (Metal Oxide)

92A

1

30V

80W Tc

Single

60A

ENHANCEMENT MODE

80W

DRAIN

9 ns

N-Channel

SWITCHING

5.9m Ω @ 35A, 10V

2.5V @ 250μA

2525pF @ 15V

16A Ta 92A Tc

67nC @ 10V

103ns

4.5V 10V

±20V

44 ns

56 ns

92A

TO-220AB

20V

30V

74 mJ

9.4mm

10.67mm

4.83mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP8440

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

Through Hole

-

TO-220AB

3

-

-

Tube

-

2017

-

yes

Active

1 (Unlimited)

3

EAR99

2.2MOhm

-

-

FET General Purpose Power

-

-

-

1

-

-

Single

-

ENHANCEMENT MODE

306W

-

43 ns

-

SWITCHING

-

-

-

-

-

130ns

-

-

290 ns

435 ns

277A

-

20V

40V

-

16.51mm

10.67mm

4.83mm

No

ROHS3 Compliant

Lead Free

1.8g

175°C

-55°C

306W

40V

N-CHANNEL

500A

24.74nF

METAL-OXIDE SEMICONDUCTOR

2.2mOhm

2.2 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP8896 vs FDP8440
FDP8876

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

-

-

MOSFET (Metal Oxide)

-

1

-

70W Tc

-

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

8.7m Ω @ 40A, 10V

2.5V @ 250μA

1.7pF @ 15V

70A Tc

45nC @ 10V

-

4.5V 10V

±20V

-

-

-

TO-220AB

-

-

180 mJ

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

30V

-

-

-

-

-

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

70A

0.0105Ohm

30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP8896 vs FDP8876
FDP8443_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220-3

Automotive, AEC-Q101, PowerTrench®

3.5 mOhm @ 80A, 10V

188W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

9310pF @ 25V

185nC @ 10V

N-Channel

-

10V

40V

20A (Ta), 80A (Tc)

FDP8896 vs FDP8443_F085