Fairchild/ON Semiconductor FDP8876
- Part Number:
- FDP8876
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2490691-FDP8876
- Description:
- MOSFET N-CH 30V 70A TO-220
- ECAD Model:
-
- Datasheet:
- FDP8876
Fairchild/ON Semiconductor FDP8876 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP8876.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max70W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.7m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.7pF @ 15V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)70A
- Drain-source On Resistance-Max0.0105Ohm
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)180 mJ
- RoHS StatusROHS3 Compliant
FDP8876 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 180 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.7pF @ 15V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDP8876 Features
the avalanche energy rating (Eas) is 180 mJ
a 30V drain to source voltage (Vdss)
FDP8876 Applications
There are a lot of Rochester Electronics, LLC
FDP8876 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 180 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.7pF @ 15V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDP8876 Features
the avalanche energy rating (Eas) is 180 mJ
a 30V drain to source voltage (Vdss)
FDP8876 Applications
There are a lot of Rochester Electronics, LLC
FDP8876 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FDP8876 More Descriptions
Trans MOSFET N-CH 30V 70A 3-Pin(3 Tab) TO-220AB Tube
RAIL / 30V,71A,8.5 OHMS,NCH,TO220,POWER TRENCH MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
RAIL / 30V,71A,8.5 OHMS,NCH,TO220,POWER TRENCH MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
The three parts on the right have similar specifications to FDP8876.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeResistanceMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreePulsed Drain Current-Max (IDM)View Compare
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FDP8876Through HoleTO-220-3NOSILICON-55°C~175°C TJTubePowerTrench®e3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE70W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8.7m Ω @ 40A, 10V2.5V @ 250μA1.7pF @ 15V70A Tc45nC @ 10V30V4.5V 10V±20VTO-220AB70A0.0105Ohm30V180 mJROHS3 Compliant-------------------------------------- -
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubePowerTrench®e3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE254W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING3.1m Ω @ 80A, 10V4V @ 250μA12.2pF @ 25V23A Ta 80A Tc235nC @ 10V40V10V±20VTO-220AB23A0.0031Ohm40V720 mJROHS3 Compliant-------------------------------------
-
-TO-220AB---Tube-e3yesActive1 (Unlimited)3Tin (Sn)--------1--ENHANCEMENT MODEDRAIN-SWITCHING-----30V-------ROHS3 CompliantACTIVE (Last Updated: 3 days ago)10 WeeksThrough Hole31.8g2004EAR994.1MOhm175°C-55°CFET General Purpose Power30V160W160ASingle160W11 ns105nsN-CHANNEL46 ns70 ns156A2.5V20V30V5.2nFMETAL-OXIDE SEMICONDUCTOR4.1mOhm4.1 mΩ2.5 V9.4mm10.67mm4.83mmNo SVHCNoLead Free-
-
-TO-220AB---Tube--yesActive1 (Unlimited)3---------1--ENHANCEMENT MODE--SWITCHING-----40V-------ROHS3 CompliantACTIVE (Last Updated: 3 days ago)9 WeeksThrough Hole31.8g2017EAR992.2MOhm175°C-55°CFET General Purpose Power-306W-Single306W43 ns130nsN-CHANNEL290 ns435 ns277A-20V40V24.74nFMETAL-OXIDE SEMICONDUCTOR2.2mOhm2.2 mΩ-16.51mm10.67mm4.83mm-NoLead Free500A
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