Fairchild/ON Semiconductor FDP8N50NZ

Name: FDP8N50NZ
Brand: Fairchild/ON Semiconductor
SKU: 2849998-FDP8N50NZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP8N50NZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849998-FDP8N50NZ

Description:: MOSFET N-CH 500V TO-220AB-3

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP8N50NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP8N50NZ.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
130W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
130W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
735pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
34ns
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
8A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
8A
Drain-source On Resistance-Max
0.85Ohm
DS Breakdown Voltage-Min
500V
Height
9.4mm
Length
10.67mm
Width
4.83mm
RoHS Status
ROHS3 Compliant

Description

FDP8N50NZ Description
The high voltage UniFET II MOSFET family from Fairchild Semiconductor is based on cutting-edge planar stripe and DMOS technology. This cutting-edge MOSFET series offers greater switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode as well. This device series is appropriate for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

FDP8N50NZ Features
?770 mQ (Typ.) RDS(on) at VGS
? Minimal Gate Fee (Typ. 14 nC)
?Small Crss (Typ. 5 pF)
?Avalanche tested in full
?Increase the dv/dt capability
Improved ESD Capability

FDP8N50NZ Applications
?LCD or LED TV
?Lighting
?A backup power supply
?Power Supply, AC-DC

FDP8N50NZ More Descriptions

N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220
Trans MOSFET N-CH 500V 8A 3-Pin(3 Tab) TO-220 Rail
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDP8N50NZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Height

Length

Width

RoHS Status

Reach Compliance Code

Drain to Source Breakdown Voltage

Lead Free

Surface Mount

Terminal Position

Pin Count

JESD-30 Code

Configuration

Case Connection

Avalanche Energy Rating (Eas)

View Compare
FDP8N50NZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

6 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET™

2010

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

130W Tc

Single

ENHANCEMENT MODE

130W

17 ns

N-Channel

SWITCHING

850m Ω @ 4A, 10V

5V @ 250μA

735pF @ 25V

8A Tc

18nC @ 10V

34ns

500V

10V

±25V

27 ns

43 ns

8A

TO-220AB

25V

8A

0.85Ohm

500V

9.4mm

10.67mm

4.83mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-
FDP8441_F085

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

Automotive, AEC-Q101, PowerTrench®

2006

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

-

-

300W Tc

-

-

-

-

N-Channel

-

2.7m Ω @ 80A, 10V

4V @ 250μA

15000pF @ 25V

23A Ta 80A Tc

280nC @ 10V

-

40V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

compliant

-

-

-

-

-

-

-

-

-

FDP8N50NZ vs FDP8441_F085
FDP8878

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3

-

1.8g

-

-55°C~175°C TJ

Tube

PowerTrench®

2001

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

-

1

40.5W Tc

Single

-

40.5W

-

N-Channel

-

15m Ω @ 40A, 10V

2.5V @ 250μA

1235pF @ 15V

40A Tc

23nC @ 10V

244ns

-

4.5V 10V

±20V

35.3 ns

14.8 ns

40A

-

20V

-

-

-

-

-

-

RoHS Compliant

-

30V

Lead Free

-

-

-

-

-

-

-

FDP8N50NZ vs FDP8878
FDP8876

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

MOSFET (Metal Oxide)

NOT APPLICABLE

NOT APPLICABLE

COMMERCIAL

1

70W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

8.7m Ω @ 40A, 10V

2.5V @ 250μA

1.7pF @ 15V

70A Tc

45nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

TO-220AB

-

70A

0.0105Ohm

30V

-

-

-

ROHS3 Compliant

unknown

-

-

NO

SINGLE

3

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

DRAIN

180 mJ

FDP8N50NZ vs FDP8876