Fairchild/ON Semiconductor FDP3632

Name: FDP3632
Brand: Fairchild/ON Semiconductor
SKU: 2479068-FDP3632
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP3632

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479068-FDP3632

Description:: MOSFET N-CH 100V 80A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP3632 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP3632.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 3 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
9MOhm
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
44A
Number of Elements
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
39ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
96 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Height
9.4mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The FDP3632 is a POWERTRENCH MOSFET with N-Channel. ON Semi manufactures a wide range of MOSFET devices, including both high-voltage (>250V) and low-voltage (250V) versions. Smaller die sizes are possible thanks to modern silicon technology, which is used in a variety of industry-standard and thermally enhanced packaging. Reduced voltage spikes and overshoot, lower junction capacitance and reverse recovery charge, and the elimination of unnecessary external components all contribute to ON Semi MOSFETs' higher design reliability.

Features
? Low Qrr Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? These Devices are Pb?Free and are RoHS Compliant ? RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A ? Qg (tot) = 84 nC (Typ.), VGS = 10 V ? Low Miller Charge

Applications
? Synchronous Rectification ? Battery Protection Circuit ? Motor Drives and Uninterruptible Power Supplies ? Micro Solar Inverter ? Circuit

FDP3632 More Descriptions

Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3 Tab) TO-220AB Tube
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10
Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pulse Current Idm: 820A; SMD Marking: FDP3632; Voltage Vgs Max: 4V

Product Comparison

The three parts on the right have similar specifications to FDP3632.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Subcategory

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Additional Feature

JESD-30 Code

Drain-source On Resistance-Max

Drain Current-Max (Abs) (ID)

View Compare
FDP3632

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 3 days ago)

4 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2004

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

9MOhm

100V

MOSFET (Metal Oxide)

44A

1

310W Tc

Single

ENHANCEMENT MODE

310W

DRAIN

30 ns

N-Channel

SWITCHING

9m Ω @ 80A, 10V

4V @ 250μA

6000pF @ 25V

12A Ta 80A Tc

110nC @ 10V

39ns

6V 10V

±20V

46 ns

96 ns

80A

4V

TO-220AB

20V

100V

9.4mm

10.67mm

4.83mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
FDP3651U

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

18MOhm

100V

MOSFET (Metal Oxide)

80A

1

255W Tc

Single

ENHANCEMENT MODE

255W

DRAIN

15 ns

N-Channel

SWITCHING

18m Ω @ 80A, 10V

5.5V @ 250μA

5522pF @ 25V

80A Tc

69nC @ 10V

16ns

10V

±20V

14 ns

32 ns

80A

4.5V

TO-220AB

20V

100V

9.4mm

10.67mm

4.83mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

FET General Purpose Power

220A

266 mJ

-

-

-

-

FDP3632 vs FDP3651U
FDP39N20

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

4 Weeks

-

Through Hole

Through Hole

TO-220-3

-

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET™

-

e3

yes

Active

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

-

1

251W Tc

Single

ENHANCEMENT MODE

251W

-

30 ns

N-Channel

SWITCHING

66m Ω @ 19.5A, 10V

5V @ 250μA

2130pF @ 25V

39A Tc

49nC @ 10V

160ns

10V

±30V

150 ns

150 ns

39A

-

TO-220AB

30V

200V

-

-

-

-

No

ROHS3 Compliant

-

Tin (Sn)

FET General Purpose Power

-

860 mJ

FAST SWITCHING

R-PSFM-T3

0.066Ohm

-

FDP3632 vs FDP39N20
FDP3672

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

33MOhm

105V

MOSFET (Metal Oxide)

41A

1

135W Tc

Single

ENHANCEMENT MODE

135W

DRAIN

12 ns

N-Channel

SWITCHING

33m Ω @ 41A, 10V

4V @ 250μA

1670pF @ 25V

5.9A Ta 41A Tc

37nC @ 10V

48ns

6V 10V

±20V

27 ns

24 ns

41A

-

TO-220AB

20V

105V

9.4mm

10.67mm

4.83mm

-

No

ROHS3 Compliant

Lead Free

Tin (Sn)

FET General Purpose Power

-

48 mJ

-

-

-

5.9A

FDP3632 vs FDP3672

Certification

Related parts for FDP3632

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FDP3651U

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FDP39N20

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Part Number	Manufacturers	Description	Stock	Price
FDP3632 DISTI #FDP3632	ON Semiconductor	MOSFET N-CH 100V 80A TO-220AB RoHS: Compliant	2208	1 $3.36 10 $3.005 100 $2.481 800 $1.84093 1600 $1.72454
FDP3632 DISTI #FDP3632	ON Semiconductor	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	1400	1 $1.19 10 $1.09 25 $1.09 50 $1.09 100 $1.09 500 $1.09 1000 $1.09
FDP3632 DISTI #FDP3632	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 100V, 0.0 RoHS: Compliant	9511	1 $1.7 25 $1.58 100 $1.51 500 $1.45 1000 $1.38
FDP3632 DISTI #FDP3632	ON Semiconductor	MOSFET 100V 80a .9 Ohms/VGS=1V RoHS: Compliant	1048	1 $2.81 10 $2.39 100 $2.07 250 $1.96 500 $1.76
FDP3632_Q DISTI #FDP3632_Q	ON Semiconductor	MOSFET 100V 80a .9 Ohms/VGS=1V RoHS: Not Compliant	0
FDP3632 DISTI #FDP3632	Fairchild Semiconductor Corporation		22
FDP3632 DISTI #FDP3632	ON Semiconductor	MOSFET N-CHANNEL 100V 12A TO220AB, TU	12	10 $2.15 20 $1.94
FDP3632 DISTI #FDP3632	ON Semiconductor	Transistor: N-MOSFET, unipolar, 100V, 12A, 310	68	1 $3.98 3 $3.41 10 $2.74 25 $2.47
FDP3632 DISTI #FDP3632	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 100V, 0.0 RoHS: Not Compliant	100
FDP3632 DISTI #FDP3632	ON Semiconductor	RoHS: Compliant	0	1 $4.45 10 $3.78 100 $3.28 250 $3.1 500 $2.79

Fairchild/ON Semiconductor FDP3632

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