Fairchild/ON Semiconductor FDP18N50

Name: FDP18N50
Brand: Fairchild/ON Semiconductor
SKU: 2479960-FDP18N50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP18N50

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479960-FDP18N50

Description:: MOSFET N-CH 500V 18A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP18N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP18N50.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
9 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
265MOhm
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
18A
Number of Elements
1
Voltage
500V
Power Dissipation-Max
235W Tc
Element Configuration
Single
Current
18A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
235W
Turn On Delay Time
55 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
265m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
165ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
90 ns
Turn-Off Delay Time
95 ns
Continuous Drain Current (ID)
18A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Avalanche Energy Rating (Eas)
945 mJ
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP18N50 Description
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDP18N50 Features
RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF)
100% Avalanche Tested

FDP18N50 Applications
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply

FDP18N50 More Descriptions

N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220
Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
N-Channel 500 V 265 mOhm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET NCH 18A 500V TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):265mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:235W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDP18N50.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
FDP18N50

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

9 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

UniFET™

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

265MOhm

FAST SWITCHING

FET General Purpose Power

500V

MOSFET (Metal Oxide)

18A

1

500V

235W Tc

Single

18A

ENHANCEMENT MODE

235W

55 ns

N-Channel

SWITCHING

265m Ω @ 9A, 10V

5V @ 250μA

2860pF @ 25V

18A Tc

60nC @ 10V

165ns

10V

±30V

90 ns

95 ns

18A

5V

TO-220AB

30V

500V

945 mJ

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-
FDP13AN06A0

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

115W Tc

-

-

-

-

-

N-Channel

-

13.5mOhm @ 62A, 10V

4V @ 250μA

1.35pF @ 25V

10.9A Ta 62A Tc

29nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220-3

60V

FDP18N50 vs FDP13AN06A0
FDP15N50

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

300W Tc

-

-

-

-

-

N-Channel

-

380mOhm @ 7.5A, 10V

4V @ 250μA

1.85pF @ 25V

15A Tc

41nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220-3

500V

FDP18N50 vs FDP15N50
FDP120AN15A0

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

65W Tc

-

-

-

-

-

N-Channel

-

120mOhm @ 4A, 10V

4V @ 250μA

770pF @ 25V

2.8A Ta 14A Tc

14.5nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220-3

150V

FDP18N50 vs FDP120AN15A0

Certification

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FDP18N50 Specification

Part Number	Manufacturers	Description	Stock	Price
FDP18N50 DISTI #V99:2348_06359879	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R	230	1 $3.1236 10 $2.4173 100 $1.934 500 $1.6473 1000 $1.3673 2500 $1.2407 5000 $1.2158
FDP18N50 DISTI #V36:1790_06359879	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R	0	1000 $2.58 10000 $2.441 100000 $1.622 500000 $1.186 1000000 $1.182
FDP18N50 DISTI #FDP18N50-ND	ON Semiconductor	MOSFET N-CH 500V 18A TO-220 RoHS: Compliant	3035	1 $2.52 10 $2.262 25 $2.1336 100 $1.8178 1000 $1.23749 3000 $1.15214 5000 $1.10947
FDP18N50 DISTI #24887254	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R	11241	11 $0.9387
FDP18N50 DISTI #30717276	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R	230	7 $3.1236
FDP18N50 DISTI #FDP18N50	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	2000	1000 $1.4136 2000 $1.35923 3000 $1.30889 5000 $1.26214 10000 $1.21862 25000 $1.19797 50000 $1.178
FDP18N50 DISTI #FDP18N50	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	500	1 $1.2289 10 $1.1169 25 $1.0239 50 $0.9829 100 $0.9449 500 $0.9099 1000 $0.8779
FDP18N50 DISTI #FDP18N50	ON Semiconductor	Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	0	1000 $0.9509 2000 $0.9449 4000 $0.9329 6000 $0.9209 10000 $0.8979
FDP18N50 DISTI #61M6289	ON Semiconductor	MOSFET N-CHANNEL 18A 500V TO220, Transistor Polar	10771	1 $2.41 10 $2.05 100 $1.64 500 $1.43 1000 $1.18 2500 $1.1 5000 $1.06
FDP18N50 DISTI #512-FDP18N50	ON Semiconductor	MOSFET 500V N-Channel PowerTrench MOSFET RoHS: Compliant	758	1 $2.39 10 $2.03 100 $1.62 500 $1.42 1000 $1.17 2000 $1.09 5000 $1.05
FDP18N50 DISTI #	Fairchild Semiconductor Corporation		999
FDP18N50 DISTI #FDP18N50	ON Semiconductor	Transistor: N-MOSFET, unipolar, 500V, 10.8A, 2	118	1 $2.16 3 $1.98 10 $1.62 50 $1.37 250 $1.24
FDP18N50 DISTI #1495258	ON Semiconductor	MOSFET NCH 18A 500V TO220	11394	1 $2.11 10 $1.58 100 $1.25 250 $1.18 500 $1.1
FDP18N50 DISTI #1495258	ON Semiconductor	MOSFET NCH 18A 500V TO220 RoHS: Compliant	11822	1 $3.68 10 $3.13 100 $2.49 500 $2.19 1000 $1.8 2000 $1.68 5000 $1.62
FDP18N50 DISTI #XSKDRABS0031921		Transistor RoHS: Compliant	3300	1000 $1.31 3300 $1.22
FDP18N50 DISTI #XSFT00000033568	Fairchild Semiconductor Corporation	RoHS: Compliant	800	150 $1.71
FDP18N50 DISTI #	Fairchild Semiconductor Corporation	500V,18A,265m,N-CHANNEL UniFET MOSFET	500	1 $2.1 100 $1.47 500 $1.12 1000 $1.05

FDP18N5~~(3)~~
FDP18N~~(7)~~
FDP18~~(7)~~
FDP1~~(72)~~
FDP~~(96)~~

Fairchild/ON Semiconductor FDP18N50

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