Fairchild/ON Semiconductor FDP090N10
- Part Number:
- FDP090N10
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2483216-FDP090N10
- Description:
- MOSFET N-CH 100V 75A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FDP090N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP090N10.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time9 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max208W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation208W
- Turn On Delay Time107 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8225pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs116nC @ 10V
- Rise Time322ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)149 ns
- Turn-Off Delay Time166 ns
- Continuous Drain Current (ID)75A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.009Ohm
- Drain to Source Breakdown Voltage100V
- Nominal Vgs3.5 V
- Height16.51mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDP090N10 Description
FDP090N10 is an N-channel power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of the FDP090N10 is -55°C~175°C TJ and its maximum power dissipation is 208W. This N-Channel MOSFET is produced using a PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDP090N10 Features
RDS(on) = 7.2m? ( Typ.) @ VGS = 10V, ID = 75A
Fast switching speed
Low Gate Charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
FDP090N10 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing
FDP090N10 is an N-channel power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of the FDP090N10 is -55°C~175°C TJ and its maximum power dissipation is 208W. This N-Channel MOSFET is produced using a PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDP090N10 Features
RDS(on) = 7.2m? ( Typ.) @ VGS = 10V, ID = 75A
Fast switching speed
Low Gate Charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
FDP090N10 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing
FDP090N10 More Descriptions
Single N-Channel 100 V 208 W 116 nC PowerTrench Through Hole Mosfet - TO-220-3
Trans MOSFET N-CH 100V 75A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
N-Channel PowerTrench® MOSFET 100V, 75A, 9mΩ
Power Field-Effect Transistor, 75A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 100V, 75A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:300A
Trans MOSFET N-CH 100V 75A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
N-Channel PowerTrench® MOSFET 100V, 75A, 9mΩ
Power Field-Effect Transistor, 75A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 100V, 75A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:300A
The three parts on the right have similar specifications to FDP090N10.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusConfigurationDrain to Source Voltage (Vdss)ResistanceTerminal FinishVoltage - Rated DCCurrent RatingCase ConnectionThreshold VoltageLead FreeVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
-
FDP090N10ACTIVE (Last Updated: 2 days ago)9 WeeksTinThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~175°C TJTubePowerTrench®2004e3yesActive1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)1208W TcSingleENHANCEMENT MODE208W107 nsN-ChannelSWITCHING9m Ω @ 75A, 10V4.5V @ 250μA8225pF @ 25V75A Tc116nC @ 10V322ns10V±20V149 ns166 ns75ATO-220AB20V0.009Ohm100V3.5 V16.51mm10.67mm4.83mmNo SVHCNoROHS3 Compliant----------------------------
-
---Through HoleThrough HoleTO-220-3----55°C~175°C TJTubePowerTrench®--yesObsolete1 (Unlimited)--FET General Purpose PowerMOSFET (Metal Oxide)-263W Tc-ENHANCEMENT MODE--N-Channel-4.5m Ω @ 100A, 10V4V @ 250μA5270pF @ 50V120A Tc74nC @ 10V-10V±20V--120A----------RoHS CompliantSingle100V-------------------------
-
ACTIVE (Last Updated: 2 days ago)9 Weeks-Through HoleThrough HoleTO-220-331.8gSILICON-55°C~175°C TJTubePowerTrench®2002e3yesActive1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)1255W TcSingleENHANCEMENT MODE255W19 nsN-ChannelSWITCHING6m Ω @ 80A, 10V4V @ 250μA5150pF @ 25V16A Ta 80A Tc95nC @ 10V79ns6V 10V±20V38 ns37 ns80ATO-220AB20V-75V-9.4mm10.67mm4.83mmNo SVHCNoROHS3 Compliant--6MOhmTin (Sn)75V80ADRAIN4VLead Free------------------
-
------------------------------------------------------------4V @ 250µA±20VMOSFET (Metal Oxide)TO-220-3PowerTrench®3.1 mOhm @ 100A, 10V205W (Tc)TubeTO-220-3-55°C ~ 175°C (TJ)Through Hole8030pF @ 30V99nC @ 10VN-Channel-10V60V120A (Tc)
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
24 November 2023
An Introduction to the PCA9685 16-Channel Servo Controller Module
Ⅰ. Overview of PCA9685Ⅱ. Manufacturer of PCA9685Ⅲ. Pin configuration of PCA9685Ⅳ. What are the features of PCA9685?Ⅴ. How does the PCA9685 work?Ⅵ. What are the applications of PCA9685?Ⅶ.... -
27 November 2023
TL082 Operational Amplifier Equivalents, Features, TL072 vs TL082 and Applications
Ⅰ. Overview of TL082 operational amplifierⅡ. Features of TL082 operational amplifierⅢ. Pin configuration of TL082 operational amplifierⅣ. How does the output short-circuit protection function of TL082 work?Ⅴ. Functional... -
27 November 2023
BT151 SCR Features, Pin Configuration, Working Principle and Applications
Ⅰ. What is a one-way thyristor?Ⅱ. Overview of BT151Ⅲ. What are the features of BT151?Ⅳ. Footprint and pin configuration of BT151Ⅴ. Technical parameters of BT151Ⅵ. How to measure... -
28 November 2023
An Introduction to LM393 Low Power Dual Voltage Comparator
Ⅰ. What is LM393 comparator?Ⅱ. What are the features of LM393 comparator?Ⅲ. Pin configuration of LM393 comparatorⅣ. Functions of LM393 comparatorⅤ. Technical parameters of LM393 comparatorⅥ. Typical circuit...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.