FDP090N10

Fairchild/ON Semiconductor FDP090N10

Part Number:
FDP090N10
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483216-FDP090N10
Description:
MOSFET N-CH 100V 75A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor FDP090N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP090N10.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    9 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    PowerTrench®
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    208W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    208W
  • Turn On Delay Time
    107 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8225pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    116nC @ 10V
  • Rise Time
    322ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    149 ns
  • Turn-Off Delay Time
    166 ns
  • Continuous Drain Current (ID)
    75A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.009Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Nominal Vgs
    3.5 V
  • Height
    16.51mm
  • Length
    10.67mm
  • Width
    4.83mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDP090N10 Description
FDP090N10 is an N-channel power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of the FDP090N10 is -55°C~175°C TJ and its maximum power dissipation is 208W. This N-Channel MOSFET is produced using a PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDP090N10 Features
RDS(on) = 7.2m? ( Typ.) @ VGS = 10V, ID = 75A
Fast switching speed
Low Gate Charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant

FDP090N10 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing
FDP090N10 More Descriptions
Single N-Channel 100 V 208 W 116 nC PowerTrench Through Hole Mosfet - TO-220-3
Trans MOSFET N-CH 100V 75A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
N-Channel PowerTrench® MOSFET 100V, 75A, 9mΩ
Power Field-Effect Transistor, 75A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 100V, 75A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:300A
Product Comparison
The three parts on the right have similar specifications to FDP090N10.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Configuration
    Drain to Source Voltage (Vdss)
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Case Connection
    Threshold Voltage
    Lead Free
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • FDP090N10
    FDP090N10
    ACTIVE (Last Updated: 2 days ago)
    9 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    PowerTrench®
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    208W Tc
    Single
    ENHANCEMENT MODE
    208W
    107 ns
    N-Channel
    SWITCHING
    9m Ω @ 75A, 10V
    4.5V @ 250μA
    8225pF @ 25V
    75A Tc
    116nC @ 10V
    322ns
    10V
    ±20V
    149 ns
    166 ns
    75A
    TO-220AB
    20V
    0.009Ohm
    100V
    3.5 V
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDP045N10A
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    PowerTrench®
    -
    -
    yes
    Obsolete
    1 (Unlimited)
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    263W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    4.5m Ω @ 100A, 10V
    4V @ 250μA
    5270pF @ 50V
    120A Tc
    74nC @ 10V
    -
    10V
    ±20V
    -
    -
    120A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Single
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDP060AN08A0
    ACTIVE (Last Updated: 2 days ago)
    9 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    PowerTrench®
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    255W Tc
    Single
    ENHANCEMENT MODE
    255W
    19 ns
    N-Channel
    SWITCHING
    6m Ω @ 80A, 10V
    4V @ 250μA
    5150pF @ 25V
    16A Ta 80A Tc
    95nC @ 10V
    79ns
    6V 10V
    ±20V
    38 ns
    37 ns
    80A
    TO-220AB
    20V
    -
    75V
    -
    9.4mm
    10.67mm
    4.83mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    6MOhm
    Tin (Sn)
    75V
    80A
    DRAIN
    4V
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDP030N06B_F102
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-220-3
    PowerTrench®
    3.1 mOhm @ 100A, 10V
    205W (Tc)
    Tube
    TO-220-3
    -55°C ~ 175°C (TJ)
    Through Hole
    8030pF @ 30V
    99nC @ 10V
    N-Channel
    -
    10V
    60V
    120A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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