FDP075N15A

Fairchild/ON Semiconductor FDP075N15A

Part Number:
FDP075N15A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586673-FDP075N15A
Description:
MOSFET N-CH 150V 130A TO-220-3
ECAD Model:
Datasheet:
FDP075N15A

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Specifications
Fairchild/ON Semiconductor FDP075N15A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP075N15A.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    PowerTrench®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    333W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7350pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    130A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    100nC @ 10V
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    120A
  • Drain-source On Resistance-Max
    0.0075Ohm
  • Pulsed Drain Current-Max (IDM)
    522A
  • DS Breakdown Voltage-Min
    150V
  • Avalanche Energy Rating (Eas)
    588 mJ
  • RoHS Status
    RoHS Compliant
Description
FDP075N15A Description
The FDP075N15A N-Channel MOSFET from ON Semiconductor is manufactured utilizing a sophisticated PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.

FDP075N15A Features
RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
Fast Switching
Low Gate Charge
High-Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant

FDP075N15A Application
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
FDP075N15A More Descriptions
MOSFET N-CH 150V 130A TO-220-3
Product Comparison
The three parts on the right have similar specifications to FDP075N15A.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • FDP075N15A
    FDP075N15A
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    PowerTrench®
    Obsolete
    1 (Unlimited)
    3
    EAR99
    ULTRA-LOW RESISTANCE
    8541.29.00.95
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    333W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    7.5m Ω @ 100A, 10V
    4V @ 250μA
    7350pF @ 75V
    130A Tc
    100nC @ 10V
    150V
    10V
    ±20V
    TO-220AB
    120A
    0.0075Ohm
    522A
    150V
    588 mJ
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDP039N08B_F102
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4.5V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-220-3
    PowerTrench®
    3.9 mOhm @ 100A, 10V
    214W (Tc)
    Tube
    TO-220-3
    -55°C ~ 175°C (TJ)
    Through Hole
    9450pF @ 40V
    133nC @ 10V
    N-Channel
    -
    10V
    80V
    120A (Tc)
  • FDP027N08B_F102
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    4.5V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-220-3
    PowerTrench®
    2.7 mOhm @ 100A, 10V
    246W (Tc)
    Tube
    TO-220-3
    -55°C ~ 175°C (TJ)
    Through Hole
    13530pF @ 40V
    178nC @ 10V
    N-Channel
    -
    10V
    80V
    120A (Tc)
  • FDP030N06B_F102
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-220-3
    PowerTrench®
    3.1 mOhm @ 100A, 10V
    205W (Tc)
    Tube
    TO-220-3
    -55°C ~ 175°C (TJ)
    Through Hole
    8030pF @ 30V
    99nC @ 10V
    N-Channel
    -
    10V
    60V
    120A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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