Fairchild/ON Semiconductor FDP075N15A
- Part Number:
- FDP075N15A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586673-FDP075N15A
- Description:
- MOSFET N-CH 150V 130A TO-220-3
- Datasheet:
- FDP075N15A
Fairchild/ON Semiconductor FDP075N15A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP075N15A.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureULTRA-LOW RESISTANCE
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max333W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7350pF @ 75V
- Current - Continuous Drain (Id) @ 25°C130A Tc
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)120A
- Drain-source On Resistance-Max0.0075Ohm
- Pulsed Drain Current-Max (IDM)522A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)588 mJ
- RoHS StatusRoHS Compliant
FDP075N15A Description
The FDP075N15A N-Channel MOSFET from ON Semiconductor is manufactured utilizing a sophisticated PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.
FDP075N15A Features
RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
Fast Switching
Low Gate Charge
High-Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
FDP075N15A Application
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
The FDP075N15A N-Channel MOSFET from ON Semiconductor is manufactured utilizing a sophisticated PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.
FDP075N15A Features
RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
Fast Switching
Low Gate Charge
High-Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
FDP075N15A Application
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
FDP075N15A More Descriptions
MOSFET N-CH 150V 130A TO-220-3
The three parts on the right have similar specifications to FDP075N15A.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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FDP075N15AThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubePowerTrench®Obsolete1 (Unlimited)3EAR99ULTRA-LOW RESISTANCE8541.29.00.95FET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE333W TcENHANCEMENT MODEN-ChannelSWITCHING7.5m Ω @ 100A, 10V4V @ 250μA7350pF @ 75V130A Tc100nC @ 10V150V10V±20VTO-220AB120A0.0075Ohm522A150V588 mJRoHS Compliant-------------------
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-----------------------------------------4.5V @ 250µA±20VMOSFET (Metal Oxide)TO-220-3PowerTrench®3.9 mOhm @ 100A, 10V214W (Tc)TubeTO-220-3-55°C ~ 175°C (TJ)Through Hole9450pF @ 40V133nC @ 10VN-Channel-10V80V120A (Tc)
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-----------------------------------------4.5V @ 250µA±20VMOSFET (Metal Oxide)TO-220-3PowerTrench®2.7 mOhm @ 100A, 10V246W (Tc)TubeTO-220-3-55°C ~ 175°C (TJ)Through Hole13530pF @ 40V178nC @ 10VN-Channel-10V80V120A (Tc)
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-----------------------------------------4V @ 250µA±20VMOSFET (Metal Oxide)TO-220-3PowerTrench®3.1 mOhm @ 100A, 10V205W (Tc)TubeTO-220-3-55°C ~ 175°C (TJ)Through Hole8030pF @ 30V99nC @ 10VN-Channel-10V60V120A (Tc)
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