Fairchild/ON Semiconductor FDP040N06

Name: FDP040N06
Brand: Fairchild/ON Semiconductor
SKU: 2852735-FDP040N06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP040N06

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2852735-FDP040N06

Description:: MOSFET N-CH 60V 120A TO220

ECAD Model:

Datasheet:: FDP040N06 TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP040N06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP040N06.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
231W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8.235pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
133nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

FDP040N06 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8.235pF @ 25V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

FDP040N06 Features
a 60V drain to source voltage (Vdss)

FDP040N06 Applications
There are a lot of Rochester Electronics, LLC
FDP040N06 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FDP040N06 More Descriptions

MOSFET N-CH 60V 120A TO220
MOSFET PT3 Low Qg 60V, 4.0Mohm
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Product Comparison

The three parts on the right have similar specifications to FDP040N06.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Configuration

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDP040N06

Fairchild/ON Semiconductor

Through Hole

TO-220-3

TO-220-3

-55°C~175°C TJ

Tube

PowerTrench®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

231W Tc

N-Channel

4mOhm @ 75A, 10V

4.5V @ 250μA

8.235pF @ 25V

120A Tc

133nC @ 10V

60V

10V

±20V

ROHS3 Compliant

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FDP047N10

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

PowerTrench®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

375W Tc

N-Channel

4.7m Ω @ 75A, 10V

4.5V @ 250μA

15265pF @ 25V

120A Tc

210nC @ 10V

-

10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 2 days ago)

7 Weeks

Through Hole

3

2.421g

SILICON

2013

e3

yes

3

EAR99

4.7MOhm

Tin (Sn)

ULTRA-LOW RESISTANCE

FET General Purpose Power

1

Single

ENHANCEMENT MODE

375W

174 ns

SWITCHING

386ns

244 ns

344 ns

164A

3.5V

TO-220AB

20V

100V

656A

15.38mm

10.1mm

4.7mm

No SVHC

No

Lead Free

-

-

-

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-

FDP040N06 vs FDP047N10
FDP045N10A

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

PowerTrench®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

263W Tc

N-Channel

4.5m Ω @ 100A, 10V

4V @ 250μA

5270pF @ 50V

120A Tc

74nC @ 10V

100V

10V

±20V

RoHS Compliant

-

-

Through Hole

-

-

-

-

-

yes

-

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FET General Purpose Power

-

-

ENHANCEMENT MODE

-

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-

120A

-

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Single

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FDP040N06 vs FDP045N10A
FDP030N06B_F102

Fairchild/ON Semiconductor

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4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220-3

PowerTrench®

3.1 mOhm @ 100A, 10V

205W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

8030pF @ 30V

99nC @ 10V

N-Channel

-

10V

60V

120A (Tc)

FDP040N06 vs FDP030N06B_F102