Fairchild/ON Semiconductor FDMA430NZ
- Part Number:
- FDMA430NZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813655-FDMA430NZ
- Description:
- MOSFET N-CH 30V 5A MICROFET
- ECAD Model:
-
- Datasheet:
- FDMA430NZ
Fairchild/ON Semiconductor FDMA430NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA430NZ.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VDFN Exposed Pad
- Number of Pins6
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance40MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation900mW
- Case ConnectionDRAIN
- Turn On Delay Time8.3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs40m Ω @ 5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds800pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5A Ta
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Rise Time7.1ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)7.1 ns
- Turn-Off Delay Time18.1 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage810mV
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)20A
- Dual Supply Voltage30V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs810 mV
- Height825μm
- Length2mm
- Width2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMA430NZ Description
The FDMA430NZ Single N-Channel MOSFET has been designed using ON Semiconductor's advanced Power Trench process to optimize the RDS(on) @VGS = 2.5 V on special MicroFET leadframe.
FDMA430NZ Features
Low Profile-0.8 mm maximum-in the new package MicroFET 2x2 mm
HBM ESD protection level > 2.5kV typical
Free from halogenated compounds and antimony oxides
RoHS Compliant
Dual Supply Voltage: 30 V
Continuous Drain Current (ID): 5 A
No SVHC
Lead Free
FDMA430NZ Applications
Li-lon Battery Pack
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
The FDMA430NZ Single N-Channel MOSFET has been designed using ON Semiconductor's advanced Power Trench process to optimize the RDS(on) @VGS = 2.5 V on special MicroFET leadframe.
FDMA430NZ Features
Low Profile-0.8 mm maximum-in the new package MicroFET 2x2 mm
HBM ESD protection level > 2.5kV typical
Free from halogenated compounds and antimony oxides
RoHS Compliant
Dual Supply Voltage: 30 V
Continuous Drain Current (ID): 5 A
No SVHC
Lead Free
FDMA430NZ Applications
Li-lon Battery Pack
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
FDMA430NZ More Descriptions
N-Channel PowerTrench® MOSFET, 2.5V Specified, 30V, 5.0A, 40mΩ
Power MOSFET, N Channel, 30 V, 5 A, 40 Milliohms, MicroFET, 6 Pins, Surface Mount
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:810mV; Power Dissipation Pd:900mW; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Package / Case:MicroFET; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.5V
DC DC Converters 1 (Unlimited) 2 8-SIP Module, 7 Leads Through Hole Isolated Module ITE (Commercial), Medical ECONOLINE RSO (1W) -40°C ~ 85°C 0.86 L x 0.36 W x 0.44 H (21.8mm x 9.2mm x 11.1mm) CONV DC/DC 1W DL /-12V OUT SIP8
Power MOSFET, N Channel, 30 V, 5 A, 40 Milliohms, MicroFET, 6 Pins, Surface Mount
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:810mV; Power Dissipation Pd:900mW; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Package / Case:MicroFET; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.5V
DC DC Converters 1 (Unlimited) 2 8-SIP Module, 7 Leads Through Hole Isolated Module ITE (Commercial), Medical ECONOLINE RSO (1W) -40°C ~ 85°C 0.86 L x 0.36 W x 0.44 H (21.8mm x 9.2mm x 11.1mm) CONV DC/DC 1W DL /-12V OUT SIP8
The three parts on the right have similar specifications to FDMA430NZ.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryTechnologyTerminal PositionNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Transistor ApplicationDrain-source On Resistance-MaxFeedback Cap-Max (Crss)PublishedDrain to Source Voltage (Vdss)View Compare
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FDMA430NZACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)6SMD/SMTEAR9940MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUAL112.4W TaSingleENHANCEMENT MODE900mWDRAIN8.3 nsN-Channel40m Ω @ 5A, 4.5V1.5V @ 250μA800pF @ 10V5A Ta11nC @ 4.5V7.1ns2.5V 4.5V±12V7.1 ns18.1 ns5A810mV12V5A30V20A30V150°C810 mV825μm2mm2mmNo SVHCNoROHS3 CompliantLead Free---------- -
ACTIVE (Last Updated: 4 days ago)8 Weeks-Surface MountSurface Mount6-WDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)6-EAR99--MOSFET (Metal Oxide)DUAL112.4W TaSingleENHANCEMENT MODE-DRAIN5.6 nsN-Channel88m Ω @ 3.3A, 10V3V @ 250μA450pF @ 50V3.3A Ta7.3nC @ 10V1.4ns4.5V 10V±20V1.6 ns11 ns3.3A-20V-100V---------ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)NO LEAD260NOT SPECIFIEDSWITCHING0.088Ohm5 pF--
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ACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)6-EAR9930MOhmOther TransistorsMOSFET (Metal Oxide)DUAL1-2.4W TaSingleENHANCEMENT MODE2.4WDRAIN7 nsP-Channel30m Ω @ 7.8A, 4.5V1.5V @ 250μA1480pF @ 10V7.8A Ta27nC @ 4.5V9ns1.5V 4.5V±8V64 ns125 ns-7.8A-700mV8V--20V24A---700 mV750μm2mm2mmNo SVHCNoROHS3 CompliantLead Free----SWITCHING--200920V
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ACTIVE (Last Updated: 4 days ago)16 Weeks-Surface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)6-EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUAL112.4W TaSingleENHANCEMENT MODE900mWDRAIN6 nsN-Channel19m Ω @ 9A, 10V3V @ 250μA760pF @ 15V9A Ta13nC @ 10V2ns4.5V 10V±20V2 ns14 ns9A1V20V9A30V--150°C2.1 V850μm2mm2mmNo SVHCNoROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)---SWITCHING-40 pF--
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