Fairchild/ON Semiconductor FDMA510PZ
- Part Number:
- FDMA510PZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848657-FDMA510PZ
- Description:
- MOSFET P-CH 20V 7.8A 6-MICROFET
- Datasheet:
- FDMA510PZ
Fairchild/ON Semiconductor FDMA510PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA510PZ.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VDFN Exposed Pad
- Number of Pins6
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2009
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance30MOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Number of Elements1
- Power Dissipation-Max2.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.4W
- Case ConnectionDRAIN
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1480pF @ 10V
- Current - Continuous Drain (Id) @ 25°C7.8A Ta
- Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
- Rise Time9ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)64 ns
- Turn-Off Delay Time125 ns
- Continuous Drain Current (ID)-7.8A
- Threshold Voltage-700mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)24A
- Nominal Vgs-700 mV
- Height750μm
- Length2mm
- Width2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMA510PZ Description
The FDMA510PZ is optimized for battery charging and load switching in cellular phones and other ultraportable devices. It includes a low-on-state resistance MOSFET. The MicroFET 2X2 package has excellent thermal performance for its size, making it ideal for linear mode applications.
FDMA510PZ Features
Low profile (maximum 0.8mm) in the new MicroFET 2X2 mm package ESD protection level of HBM > 3KV is usual (Note 3) Antimony oxides and halogenated compounds are not present.
FDMA510PZ Applications
Battery charge. Load switching. Cellular phones.
The FDMA510PZ is optimized for battery charging and load switching in cellular phones and other ultraportable devices. It includes a low-on-state resistance MOSFET. The MicroFET 2X2 package has excellent thermal performance for its size, making it ideal for linear mode applications.
FDMA510PZ Features
Low profile (maximum 0.8mm) in the new MicroFET 2X2 mm package ESD protection level of HBM > 3KV is usual (Note 3) Antimony oxides and halogenated compounds are not present.
FDMA510PZ Applications
Battery charge. Load switching. Cellular phones.
FDMA510PZ More Descriptions
P-Channel PowerTrench® MOSFET -20V, -7.8A, 30mΩ
MOSFET P-CH 20V 7.8A 6-MICROFET / Trans MOSFET P-CH 20V 7.8A 6-Pin WDFN EP T/R
MLP6 2X2 , -20V,-7.8A,30m ohm,SINGLE, PCH POWER MOSFET
FDMA510PZ Series 20 V 30 mOhm Single P-Channel PowerTrench Mosfet MicroFET 2x2
DC DC Converters 1 (Unlimited) 1 24-DIP Module, 14 Leads Through Hole Isolated Module ITE (Commercial), Medical ECONOLINE RV (2W) -40°C~85°C 1.27Lx0.58W x 0.45 H 32.4mmx14.7mmx11.4mm CONV DC/DC 2W 24VIN 15VOUT
MOSFET,P CH,20V,7.8A,MICROFET2X2; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011)
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET P-CH 20V 7.8A 6-MICROFET / Trans MOSFET P-CH 20V 7.8A 6-Pin WDFN EP T/R
MLP6 2X2 , -20V,-7.8A,30m ohm,SINGLE, PCH POWER MOSFET
FDMA510PZ Series 20 V 30 mOhm Single P-Channel PowerTrench Mosfet MicroFET 2x2
DC DC Converters 1 (Unlimited) 1 24-DIP Module, 14 Leads Through Hole Isolated Module ITE (Commercial), Medical ECONOLINE RV (2W) -40°C~85°C 1.27Lx0.58W x 0.45 H 32.4mmx14.7mmx11.4mm CONV DC/DC 2W 24VIN 15VOUT
MOSFET,P CH,20V,7.8A,MICROFET2X2; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011)
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
The three parts on the right have similar specifications to FDMA510PZ.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain Current-Max (Abs) (ID)Terminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsDrain-source On Resistance-MaxFeedback Cap-Max (Crss)View Compare
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FDMA510PZACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e4yesActive1 (Unlimited)6EAR9930MOhmOther TransistorsMOSFET (Metal Oxide)DUAL12.4W TaSingleENHANCEMENT MODE2.4WDRAIN7 nsP-ChannelSWITCHING30m Ω @ 7.8A, 4.5V1.5V @ 250μA1480pF @ 10V7.8A Ta27nC @ 4.5V9ns20V1.5V 4.5V±8V64 ns125 ns-7.8A-700mV8V-20V24A-700 mV750μm2mm2mmNo SVHCNoROHS3 CompliantLead Free---------
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ACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-WDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e4yesActive1 (Unlimited)6EAR9930MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUAL12.4W TaSingleENHANCEMENT MODE900mWDRAIN9.8 nsN-Channel-30m Ω @ 5.7A, 4.5V1.5V @ 250μA935pF @ 10V5.7A Ta12nC @ 4.5V8.6ns-2.5V 4.5V±12V8.6 ns21.5 ns5.7A830mV12V20V24A-750μm2mm2mmNo SVHCNoROHS3 CompliantLead Free24A-------
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ACTIVE (Last Updated: 4 days ago)8 Weeks-Surface MountSurface Mount6-WDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)6EAR99--MOSFET (Metal Oxide)DUAL12.4W TaSingleENHANCEMENT MODE-DRAIN5.6 nsN-ChannelSWITCHING88m Ω @ 3.3A, 10V3V @ 250μA450pF @ 50V3.3A Ta7.3nC @ 10V1.4ns-4.5V 10V±20V1.6 ns11 ns3.3A-20V100V-------ROHS3 Compliant--Nickel/Palladium/Gold (Ni/Pd/Au)NO LEAD260NOT SPECIFIED10.088Ohm5 pF
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ACTIVE (Last Updated: 4 days ago)16 Weeks-Surface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e4yesActive1 (Unlimited)6EAR99-Other TransistorsMOSFET (Metal Oxide)DUAL12.4W TaSingleENHANCEMENT MODE2.4WDRAIN9.4 nsP-ChannelSWITCHING20m Ω @ 9.4A, 4.5V1.5V @ 250μA2805pF @ 10V9.4A Ta29nC @ 4.5V19ns20V1.8V 4.5V±8V103 ns135 ns9.4A-500mV8V-20V--750μm2mm2mmNo SVHCNoROHS3 CompliantLead Free-Nickel/Palladium/Gold (Ni/Pd/Au)-26030-0.02Ohm580 pF
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