FDMA510PZ

Fairchild/ON Semiconductor FDMA510PZ

Part Number:
FDMA510PZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848657-FDMA510PZ
Description:
MOSFET P-CH 20V 7.8A 6-MICROFET
ECAD Model:
Datasheet:
FDMA510PZ

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Specifications
Fairchild/ON Semiconductor FDMA510PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA510PZ.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    30MOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Power Dissipation-Max
    2.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 7.8A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1480pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    7.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 4.5V
  • Rise Time
    9ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    64 ns
  • Turn-Off Delay Time
    125 ns
  • Continuous Drain Current (ID)
    -7.8A
  • Threshold Voltage
    -700mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Pulsed Drain Current-Max (IDM)
    24A
  • Nominal Vgs
    -700 mV
  • Height
    750μm
  • Length
    2mm
  • Width
    2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMA510PZ Description
The FDMA510PZ is optimized for battery charging and load switching in cellular phones and other ultraportable devices. It includes a low-on-state resistance MOSFET. The MicroFET 2X2 package has excellent thermal performance for its size, making it ideal for linear mode applications.
FDMA510PZ Features
Low profile (maximum 0.8mm) in the new MicroFET 2X2 mm package ESD protection level of HBM > 3KV is usual (Note 3) Antimony oxides and halogenated compounds are not present.
FDMA510PZ Applications
Battery charge. Load switching. Cellular phones.
FDMA510PZ More Descriptions
P-Channel PowerTrench® MOSFET -20V, -7.8A, 30mΩ
MOSFET P-CH 20V 7.8A 6-MICROFET / Trans MOSFET P-CH 20V 7.8A 6-Pin WDFN EP T/R
MLP6 2X2 , -20V,-7.8A,30m ohm,SINGLE, PCH POWER MOSFET
FDMA510PZ Series 20 V 30 mOhm Single P-Channel PowerTrench Mosfet MicroFET 2x2
DC DC Converters 1 (Unlimited) 1 24-DIP Module, 14 Leads Through Hole Isolated Module ITE (Commercial), Medical ECONOLINE RV (2W) -40°C~85°C 1.27Lx0.58W x 0.45 H 32.4mmx14.7mmx11.4mm CONV DC/DC 2W 24VIN 15VOUT
MOSFET,P CH,20V,7.8A,MICROFET2X2; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011)
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Product Comparison
The three parts on the right have similar specifications to FDMA510PZ.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain Current-Max (Abs) (ID)
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Drain-source On Resistance-Max
    Feedback Cap-Max (Crss)
    View Compare
  • FDMA510PZ
    FDMA510PZ
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Gold
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    30MOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    1
    2.4W Ta
    Single
    ENHANCEMENT MODE
    2.4W
    DRAIN
    7 ns
    P-Channel
    SWITCHING
    30m Ω @ 7.8A, 4.5V
    1.5V @ 250μA
    1480pF @ 10V
    7.8A Ta
    27nC @ 4.5V
    9ns
    20V
    1.5V 4.5V
    ±8V
    64 ns
    125 ns
    -7.8A
    -700mV
    8V
    -20V
    24A
    -700 mV
    750μm
    2mm
    2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMA420NZ
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Gold
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    30MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    1
    2.4W Ta
    Single
    ENHANCEMENT MODE
    900mW
    DRAIN
    9.8 ns
    N-Channel
    -
    30m Ω @ 5.7A, 4.5V
    1.5V @ 250μA
    935pF @ 10V
    5.7A Ta
    12nC @ 4.5V
    8.6ns
    -
    2.5V 4.5V
    ±12V
    8.6 ns
    21.5 ns
    5.7A
    830mV
    12V
    20V
    24A
    -
    750μm
    2mm
    2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    24A
    -
    -
    -
    -
    -
    -
    -
  • FDMA86151L
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    1
    2.4W Ta
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    5.6 ns
    N-Channel
    SWITCHING
    88m Ω @ 3.3A, 10V
    3V @ 250μA
    450pF @ 50V
    3.3A Ta
    7.3nC @ 10V
    1.4ns
    -
    4.5V 10V
    ±20V
    1.6 ns
    11 ns
    3.3A
    -
    20V
    100V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    NO LEAD
    260
    NOT SPECIFIED
    1
    0.088Ohm
    5 pF
  • FDMA910PZ
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    -
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    1
    2.4W Ta
    Single
    ENHANCEMENT MODE
    2.4W
    DRAIN
    9.4 ns
    P-Channel
    SWITCHING
    20m Ω @ 9.4A, 4.5V
    1.5V @ 250μA
    2805pF @ 10V
    9.4A Ta
    29nC @ 4.5V
    19ns
    20V
    1.8V 4.5V
    ±8V
    103 ns
    135 ns
    9.4A
    -500mV
    8V
    -20V
    -
    -
    750μm
    2mm
    2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    260
    30
    -
    0.02Ohm
    580 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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