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FDD8882

Fairchild/ON Semiconductor FDD8882

Part Number:
FDD8882
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481721-FDD8882
Description:
MOSFET N-CH 30V 55A D-PAK
ECAD Model:
Datasheet:
FDD8882, FDU8882

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Specifications
Fairchild/ON Semiconductor FDD8882 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8882.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    55A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    55W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    55W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11.5m Ω @ 35A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1260pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12.6A Ta 55A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 10V
  • Rise Time
    82ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    55A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDD8882 Description   FDD8882 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDD8882 datasheet can remove the additional component and improve system reliability in certain applications that require performance improvement of the body diode. FDD8882 ON Semiconductor is used in Primary DC-DC MOSFET, Synchronous Rectifier, and Load Switch.     FDD8882 Features   RoHS Compliant MSL1 robust package Silicon combination Advanced Package 100% UIL tested     FDD8882 Applications   Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch
FDD8882 More Descriptions
PowerTrench® MOSFET, N-Channel, 30V, 55A, 11.5mΩ
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Product Comparison
The three parts on the right have similar specifications to FDD8882.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Surface Mount
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • FDD8882
    FDD8882
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    55A
    R-PSSO-G2
    1
    55W Tc
    Single
    ENHANCEMENT MODE
    55W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    11.5m Ω @ 35A, 10V
    2.5V @ 250μA
    1260pF @ 15V
    12.6A Ta 55A Tc
    33nC @ 10V
    82ns
    4.5V 10V
    ±20V
    25 ns
    40 ns
    55A
    TO-252AA
    20V
    30V
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD8451
    FDD8451
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    DRAIN
    7 ns
    N-Channel
    SWITCHING
    24m Ω @ 9A, 10V
    3V @ 250μA
    990pF @ 20V
    9A Ta 28A Tc
    20nC @ 10V
    3ns
    4.5V 10V
    ±20V
    2 ns
    19 ns
    28A
    -
    20V
    40V
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    2.1V
    9A
    0.024Ohm
    78A
    20 mJ
    2.1 V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDD8882 vs FDD8451
  • FDD8750
    FDD8750
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    3.7W Ta 18W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    -
    40m Ω @ 2.7A, 10V
    2.5V @ 250μA
    425pF @ 13V
    6.5A Ta 2.7A Tc
    9nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    MATTE TIN
    -
    6.5A
    63Ohm
    14A
    19 mJ
    -
    -
    YES
    AVALANCHE RATED
    SINGLE
    260
    unknown
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    25V
    25V
    FDD8882 vs FDD8750
  • FDD8876
    FDD8876
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    73A
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    8.2m Ω @ 35A, 10V
    2.5V @ 250μA
    1700pF @ 15V
    15A Ta 73A Tc
    47nC @ 10V
    91ns
    4.5V 10V
    ±20V
    37 ns
    44 ns
    73A
    TO-252AA
    20V
    30V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    -
    -
    95 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDD8882 vs FDD8876
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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